Journal ArticleDOI
In situ implantation system in argonne national laboratory hvem-tandem facility
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TLDR
In this paper, an ion-beam interface system was constructed to deliver a fully characterized beam of ions into the specimen stage of the Argonne National Laboratory 12 MV high voltage electron microscope at an angle of 33° to the microscope axis.About:
This article is published in Nuclear Instruments and Methods in Physics Research.The article was published on 1981-10-01. It has received 30 citations till now. The article focuses on the topics: Ion beam & Ion beam deposition.read more
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The collapse of defect cascades to dislocation loops
TL;DR: In this article, a number of experiments have been performed to investigate the collapse of defect cascades to dislocation loops, and it has been shown that individual cascades collapse to dislocations athermally at 30 K in some materials (Ni, Cu and Cu3Au), while in Fe overlapping of cascades is necessary to produce dislocations loops.
Collapse of defect cascades to dislocation loops
TL;DR: In this article, a number of experiments have been performed to investigate the collapse of defect cascades to dislocation loops at the Argonne National Laboratory High Voltage Electron Microscope-Ion Accelerator Facility at temperatures of 30 and 300/sup 0/K in some materials (Ni, Cu, and Fe), while in another material (Fe) only overlapped cascades produced dislocations loops.
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In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratory
TL;DR: The HVEM-Tandem User Facility at Argonne National Laboratory interfaces two ion accelerators, a 2 MV tandem accelerator and a 650 kV ion implanter, to a 1.2 MV high-voltage electron microscope as discussed by the authors.
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A review of transmission electron microscopes with in situ ion irradiation
TL;DR: Transmission electron microscopy (TEM) with in situ ion irradiation is unique amongst experimental techniques in allowing the direct observation of the internal microstructure of materials on the nanoscale whilst they are being subjected to bombardment with energetic particles as mentioned in this paper.
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Amorphization of U3Si by ion or neutron irradiation
TL;DR: In this article, the same amount of damage is required for amorphization of amorphous U 3 Si 2 by ion or neutron irradiation at 30°C, and the maximum unit cell volume change is − 2.2%.