J
Jonathan A. Hinks
Researcher at University of Huddersfield
Publications - 75
Citations - 1437
Jonathan A. Hinks is an academic researcher from University of Huddersfield. The author has contributed to research in topics: Irradiation & Ion. The author has an hindex of 17, co-authored 74 publications receiving 1123 citations. Previous affiliations of Jonathan A. Hinks include University of Salford.
Papers
More filters
Journal ArticleDOI
In-situ TEM observation of the response of ultrafine- and nanocrystalline-grained tungsten to extreme irradiation environments
Osman El-Atwani,Jonathan A. Hinks,Graeme Greaves,S. Gonderman,T. Qiu,Mert Efe,Jean Paul Allain +6 more
TL;DR: A dynamic and complex evolution in the microstructure was observed including the formation of defect clusters, dislocations and bubbles, indicating the important role grain boundaries can play in trapping He and thus in giving rise to the enhanced radiation tolerance of nanocrystalline materials.
Journal ArticleDOI
Helium bubble formation in ultrafine and nanocrystalline tungsten under different extreme conditions
Osman El-Atwani,Khalid Hattar,Jonathan A. Hinks,Graeme Greaves,Sivanandan S. Harilal,Sivanandan S. Harilal,Ahmed Hassanein +6 more
TL;DR: In this paper, the effects of helium ion irradiation energy and sample temperature on the performance of grain boundaries as helium sinks in ultrafine grained and nanocrystalline tungsten were investigated.
Journal ArticleDOI
Grain size threshold for enhanced irradiation resistance in nanocrystalline and ultrafine tungsten
TL;DR: In this paper, the existence of a grain size threshold for enhanced irradiation resistance in high-temperature helium-irradiated nanocrystalline and ultrafine tungsten is demonstrated.
Journal ArticleDOI
Reversible Loss of Bernal Stacking during the Deformation of Few-Layer Graphene in Nanocomposites
Lei Gong,Robert J. Young,Ian A. Kinloch,Sarah J. Haigh,Jamie H. Warner,Jonathan A. Hinks,Ziwei Xu,Li Li,Feng Ding,Ibtsam Riaz,Rashid Jalil,Kostya S. Novoselov +11 more
TL;DR: It has been demonstrated that band broadening takes place during tensile deformation for mono- and bilayer graphene but that band narrowing occurs when the number of graphene layers is more than two and that this change in Raman band shape and width has been interpreted as being due to a reversible loss of Bernal stacking during deformation.
Journal ArticleDOI
A review of transmission electron microscopes with in situ ion irradiation
TL;DR: Transmission electron microscopy (TEM) with in situ ion irradiation is unique amongst experimental techniques in allowing the direct observation of the internal microstructure of materials on the nanoscale whilst they are being subjected to bombardment with energetic particles as mentioned in this paper.