Journal ArticleDOI
Infrared studies of the surface and gas phase reactions leading to the growth of titanium nitride thin films from tetrakis(dimethylamido)titanium and ammonia
TLDR
In this paper, the reaction of tetrakis(dimethylamido)titanium (Ti(NMe 2 ) 4 ) with ammonia has been studied in the gas phase and on titanium disilicide, aluminum, and copper surfaces using infrared spectroscopy.Abstract:
The reaction of tetrakis(dimethylamido)titanium (Ti(NMe 2 ) 4 ) with ammonia has been studied in the gas phase and on titanium disilicide, aluminum, and copper surfaces using infrared spectroscopy. In the gas phase the main product of this reaction, dimethylamine, forms rapidly even at 300 K, and a fine yellow powder is deposited on the windows of the IR cell. Under ultrahigh vacuum conditions there is no reaction between Ti(NMe 2 ) 4 and NH 3 on any of the three surfaces studied at temperature-between 300 and 650 Kread more
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Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3
TL;DR: In this article, surface chemistry and film growth were examined during titanium nitride (TiN) atomic layer deposition (ALD) using sequential exposures of tetrakis-dimethylamino titanium (TDMAT) and NH 3.
Journal ArticleDOI
Chemical vapour deposition of nitride thin films
TL;DR: An overview of the atmospheric pressure chemical vapour deposition of nitride thin films from homoleptic early transition metal and main group amido complexes [M(NR2)n] and ammonia is presented in this article.
Journal ArticleDOI
Phase stability, chemical bonding and mechanical properties of titanium nitrides: a first-principles study
Shuyin Yu,Qingfeng Zeng,Artem R. Oganov,Artem R. Oganov,Artem R. Oganov,Gilles Frapper,Litong Zhang +6 more
TL;DR: In this article, first-principles evolutionary searches for stable Ti-N compounds were performed and the authors found, in addition to the well-known rock-salt TiN, new ground states Ti3N2, Ti4N3, Ti6N5 at atmospheric pressure, and Ti2N and TiN2 at higher pressures.
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Mechanisms of surface reactions in thin solid film chemical deposition processes
TL;DR: A review of surface chemistry associated with atomic layer deposition (ALD) is presented in this paper, where a basic molecular-level understanding of the surface chemistry underpins ALD processes should afford a better approach for the selection of ALD precursors and co-reactants and for the optimization of the ALD operating conditions.
Journal ArticleDOI
Low temperature metal-organic chemical vapor deposition of advanced barrier layers for the microelectronics industry
TL;DR: In this paper, metal-organic chemical vapor deposition (MOCVD) of TiN thin films at low temperatures and low pressures using tetrakis(diethylamino) Ti (TDEAT) and NH3 is described.