Proceedings ArticleDOI
Inspection of aggressive OPC using aerial image-based mask inspection
Luke T. H. Hsu,Johnson Chang-Cheng Hung,Hong-Chang Hsieh,Anja Rosenbusch,Reuven Falah,Yuval Blumberg +5 more
- Vol. 5130, pp 357-363
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TLDR
Aera193, a new inspection system using aerial imaging as inspection methodology, is presented in this paper, where the authors present the use of Aera193 for mask inspection of aggressive OPC features.Abstract:
Inspection of aggressive OPC represents one of the major challenges for today's mask inspection methodologies. Systems are phased with high-density layouts, containing OPC features far below the resolution limit of conventional inspection systems. This causes large amounts of false and nuisance defects, especially on production applications. The paper presents the use of Aera193, a new inspection system using aerial imaging as inspection methodology.read more
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Proceedings ArticleDOI
Mask defect printing mechanisms for future lithography generations
TL;DR: In this article, the authors present an application of rigorous electromagnetic field modeling for the study of typical defect printing mechanisms in ArF immersion lithography and in EUV lithography, and the authors demonstrate several unusual printing scenarios: placement errors due to defects can become more critical than critical dimension (CD) errors, defects may print more critical at defocus positions different from the center of the process window, the defect printing may become asymmetric through focus and the risk of defect printing depends on the polarization of the used light source.
Proceedings ArticleDOI
Performance of novel 198.5-nm wavelength mask inspection system for 65-nm node and beyond optical lithography era
TL;DR: Wang et al. as discussed by the authors proposed defect size specifications of 65nm and beyond optical mask with various OPC and RET environments, and presented initial data of newly developed 198.5nm inspection wavelength system.
References
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Proceedings ArticleDOI
Mask defect printing mechanisms for future lithography generations
TL;DR: In this article, the authors present an application of rigorous electromagnetic field modeling for the study of typical defect printing mechanisms in ArF immersion lithography and in EUV lithography, and the authors demonstrate several unusual printing scenarios: placement errors due to defects can become more critical than critical dimension (CD) errors, defects may print more critical at defocus positions different from the center of the process window, the defect printing may become asymmetric through focus and the risk of defect printing depends on the polarization of the used light source.
Proceedings ArticleDOI
Performance of novel 198.5-nm wavelength mask inspection system for 65-nm node and beyond optical lithography era
TL;DR: Wang et al. as discussed by the authors proposed defect size specifications of 65nm and beyond optical mask with various OPC and RET environments, and presented initial data of newly developed 198.5nm inspection wavelength system.