Open AccessJournal Article
Interface Roughness Produced by Nitrogen Atom Incorporation at a SiO_2/Si(100) Interface : Semiconductors
Kouta Inoue,Keita Furuno,Hirohisa Kato,Naoyoshi Tamura,Kenichi Hikazutani,Seiji Sano,Takeo Hattori +6 more
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This article is published in Japanese Journal of Applied Physics.The article was published on 2001-06-01 and is currently open access. It has received 1 citations till now. The article focuses on the topics: Scanning probe microscopy & X-ray photoelectron spectroscopy.read more
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Proceedings ArticleDOI
Indications for an ideal interface structure of oxynitride tunnel dielectrics
Ziyuan Liu,Shuu Ito,Takashi Ide,Masashi Nakata,Hirokazu Ishigaki,Mariko Makabe,Markus Wilde,Katsuyuki Fukutani,Hiroyuki Mitoh,Yoshiaki Kamigaki +9 more
TL;DR: In this article, the authors proposed that the ideal interface structure of reliable tunnel oxynitride features a N-rich H-diffusion barrier layer in front of the oxide/Si interface.
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Proceedings ArticleDOI
Indications for an ideal interface structure of oxynitride tunnel dielectrics
Ziyuan Liu,Shuu Ito,Takashi Ide,Masashi Nakata,Hirokazu Ishigaki,Mariko Makabe,Markus Wilde,Katsuyuki Fukutani,Hiroyuki Mitoh,Yoshiaki Kamigaki +9 more
TL;DR: In this article, the authors proposed that the ideal interface structure of reliable tunnel oxynitride features a N-rich H-diffusion barrier layer in front of the oxide/Si interface.