Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment
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Citations
Modeling of Short-Circuit-Related Thermal Stress in Aged IGBT Modules
Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules
Electromagnetic and thermal design of a multilevel converter with high power density and reliability
Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV / 1 kA IGBT Power Modules
An Electrical Method for Junction Temperature Measurement of Power Semiconductor Switches
References
An Industry-Based Survey of Reliability in Power Electronic Converters
Power Electronics Converters for Wind Turbine Systems
Toward Reliable Power Electronics: Challenges, Design Tools, and Opportunities
Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions
Related Papers (5)
Frequently Asked Questions (16)
Q2. Why is the voltage drop during short-circuit turn-on and voltage peak during short-?
The collector voltage drop during short-circuit turn-on and voltage peak duringshort-circuit turn-off is due to the stray inductance and high current slope di/dt.
Q3. What is the stray inductance of the NDT?
The high current slope during turn-on and turn-off shortcircuits (at kA/us level) can cause voltage spikes, thus the stray inductance should be controlled at a very low level (at nH).
Q4. What is the meaning of the term “non-destructive testing”?
The “non-destructive testing” means that the series protection is activated right after the commutation to prevent the DUT from explosions in case of failure.
Q5. How can a large amount of measurements be obtained without any catastrophic damage?
with the non-destructive approach a large amount of reproducible measurements can be acquired without any catastrophic damage.
Q6. What is the importance of the protection circuit?
In any case, the intrinsic energy limitation owing to the protection circuit avoids device explosion, which provides the critical prerequisite for post-failure analysis.
Q7. What is the VG waveform during the short circuit?
Owing to the FPGA controller, the short-circuit time duration could be increased or decreased with a step of 10 ns, which provides possibility of comprehensively investigating IGBT module short-circuit behaviours.
Q8. What is the short-circuit duration of the DUT?
Through slightly increasing the short-circuit duration time by the advanced FPGA controller, DUT is tested for 1.8 µs short circuit at 500 V room temperature (25°C).
Q9. How is the inductance of the loop 1 busbar calculated?
Based on the Q3D simulations, the calculated equivalent stray inductances of the Loop 1 busbar is 8.6 nH, and the inductance of the Loop 2 busbar is estimated to be 9.4 nH.
Q10. How is the short circuit behavior of an IGBT module studied?
At first, the IGBT module is tested under 500 V for 1.2 µs short circuit at room temperature (25°C), the peak shortcircuit current reaches 2 kA.
Q11. How is the low inductance of the NDT busbar achieved?
These low inductance values are achieved by the placement of the components in a way with negative mutual coupling among them and by the application of a 200 μm Mylar isolation foil for the busbar.
Q12. What is the current distribution of the six sections inside the IGBT module?
In order to further investigate the current distribution among the six sections inside the aged IGBT module, shortcircuit tests under 900 V for 5 µs have been carried out repetitively.
Q13. What is the current of the collector and the collector during the short circuit?
Short-circuit current increases to 2.7 kA. Fig. 10 (a) shows the external gate voltage waveform and Fig. 10 (b) shows the collector current and voltage waveforms during shortcircuit.
Q14. What is the effect of ageing on short-circuit performance?
The above phenomenon shows short-circuit performances are significantly affected by ageing, thus reversely reducing IGBT module expected performance in terms of short-circuit withstanding capability.
Q15. What is the collector current and voltage waveform during short-circuit?
Short-circuit current reaches the saturation value - 3.5 kA. Fig. 11 (a) shows the collector current and voltage waveforms during short-circuit.
Q16. What is the VG waveform of the IC during short-circuit?
It clearly shows the IC is lower than the rated short-circuit current (4 kA), which may be due to the degradation in the solder layer under IGBT chips.