Patent
Manufacture of semiconductor device
TLDR
In this article, columnar electrodes are formed on the metal layer 14 in the peripheral part of the silicon substrate 21 in a wafer state, a plating resist pattern 34 is formed, electroplating is performed by using the metal layers 14 or the like as a plated current path of one side, and columnar electrode are formed in the semiconductor device.Abstract:
PROBLEM TO BE SOLVED: To enable electroplating with one plating equipment, irrespective of kinds of silicon substrates in the state of a wafer, and make the height of columnar electrodes more uniform, in a semiconductor device having the columnar electrodes formed by electroplating. SOLUTION: A tray 11 for plating is used, in which a recessed part for silicon substrate arrangement is formed in the almost central part of the upper surface of a rectangular insulating substrate 12, and a metal layer 14 is formed in a region except the recessed part for silicon substrate arrangement and specified three edge parts, on the upper surface of the insulating substrate 12. A silicon substrate 21 in a wafer state is arranged in the recessed part for silicon substrate arrangement, a plating resist pattern 34 is formed, electroplating is performed by using the metal layer 14 or the like as a plating current path of one side, and columnar electrodes are formed on the silicon substrate 21. In this case, dummy columnar electrodes are formed on the metal layer 14 in the peripheral part of the silicon substrate 21.read more
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