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Mask inspection apparatus, and exposure method and mask inspection method using the same

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TLDR
In this article, a mask inspection apparatus and method capable of inspecting masks used in double patterning with satisfactory accuracy is presented. But the method is not suitable for the inspection of masks with a high level of detail.
Abstract
The present invention provides a mask inspection apparatus and method capable of inspecting masks used in double patterning with satisfactory accuracy. Optical images of two masks are acquired (S 100 ). The acquired optical images of the two masks are combined together (S 102 ). Relative positional displacement amounts of patterns of the first mask and patterns of the second mask are measured at the combined image (S 104 ). The measured relative positional displacement amounts are compared with standard values to thereby determine whether the two masks are good (S 106 ).

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References
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Defect inspection method and apparatus therefor

TL;DR: In this article, a defect inspection apparatus for inspecting a fine circuit pattern with high resolution to detect a defective portion is constructed to have an objective lens for detecting an image of a sample, a laser illumination unit for illuminating the sample through the objective lens, an accumulation type detector, and a unit for processing the detected image signal.
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TL;DR: A pattern inspection apparatus includes a first unit configured to acquire an optical image of a target workpiece to be inspected, a second unit configurable to generate a reference image to be compared, a third unit configured, by using a mathematical model in which a parallel shift amount, an expansion and contraction error coefficient, a rotation error coefficients, a gray-level offset and an image transmission loss ratio are parameters, to calculate each of the parameters by a least-squares method, a forth unit configures to generate the corrected image by shifting a position of the reference image by a displacement amount
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