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Proceedings ArticleDOI

Matching Performance For Multiple Wafer Steppers Using An Advanced Metrology Procedure

M. A. van den Brink, +2 more
- Vol. 0921, pp 180-197
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TLDR
In this article, a methodology based on advanced metrology to quantify the overlay performance of individual wafer steppers and a means to optimize their matching is described, using accurate two point through the lens alignment directly referenced to the reticle and a three axis interferometrically controlled X-Y-0 stage.
Abstract: 
This paper describes a methodology based on advanced metrology to quantify the overlay performance of individual wafer steppers and a means to optimize their matching. Use of accurate two point through the lens alignment directly referenced to the reticle and a three axis interferometrically controlled X-Y-0 stage permits full characterisation of the individual machine overlay errors. With the help of parameters determined in an extended metrology model of the microlithographic lens distortions and the wafer stage grid distortions one can automatically adjust corresponding machine servo-mechanisms for optimum matching. The model can be used to calculate and predict the systematic errors between random pairs of machines rather thav having to directly measure all pairs, so ensuring efficient, high quality matching. Results of an eight machine matching experiment demonstrating the model's validity and effective use on PAS 2500 wafer steppers are described.

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Citations
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Patent

Reference wafer and process for manufacturing same

Adlai H. Smith, +2 more
TL;DR: In this paper, a reference reticle consisting of a 2-dimensional array of standard alignment attributes is exposed several times onto a photoresist coated semiconductor wafer using a photolithographic exposure tool.
Patent

Method and apparatus for self-referenced wafer stage positional error mapping

Adlai H. Smith, +2 more
TL;DR: In this paper, a reticle including a 2-dimensional array of standard overlay targets is exposed several times onto a photoresist coated silicon wafer using a photolithographic exposure tool.
Patent

Method and apparatus for self-referenced dynamic step and scan intra-field scanning distortion

Adlai Smith
TL;DR: In this paper, a technique for determining wafer stage grid and yaw in a projection imaging tool is described, which involves exposing an overlay reticle onto a substrate having a recording media, thereby creating a plurality of printed fields on the substrate.
Patent

Method and apparatus for self-referenced projection lens distortion mapping

Adlai H. Smith, +2 more
TL;DR: In this paper, a reticle including a 2-dimensional array of standard overlay targets is exposed several times onto a photoresist coated silicon wafer using a photolithographic stepper.
Journal ArticleDOI

Multiple linear regression analysis of the overlay accuracy model

Zone-Ching Lin, +1 more
- 01 May 1999 - 
TL;DR: In this article, the authors used multiple linear regression analysis to solve the high-order nonlinear overlay accuracy model containing seventh-order lens distortion parameters, and they found that the estimated values of low-order overlay distortion parameters are far greater than those of highorder lens distortions parameters.
References
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Proceedings ArticleDOI

Image Placement Differences Between 1:1 Projection Aligners And 10:1 Reduction Wafer Steppers

William H. Arnold
TL;DR: In this paper, the characteristic image placement errors of both 1:1 projection aligners and 10:1 reduction wafer steppers are studied with reference to the overlay difference between them.