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BookDOI

Materials modification by high-fluence ion beams

TLDR
In this article, a detailed overview of high-fluence ion irradiation is presented, along with a detailed analysis of the role of the surface binding energy in sputtering mechanisms.
Abstract
Overview.- High-fluence ion irradiation: an overview.- Sputtering.- Historical overview on the fundamentals of sputtering.- Depth of origin of sputtered atoms.- Magnetron sputtering: physics and design.- On the formation and characterization of microcrystalline Si:H prepared by RF magnetron sputtering.- Depth profiling of Ta2O5 thin layer on Ta foil by ion scattering spectrometry and ion sputtering.- Bombardment of alkali and alkali-earth halides by ions and electrons.- Effects of Ar+ angle-of-incidence on the etching of Si with Cl2 and low-energy Ar+ ions.- Irradiation effects in ices by energetic ions.- Ion formation by very high energetic ion impact on solids.- Simulation.- Computer simulation of stopping and sputtering.- Computer simulation of ion-beam mixing of cobalt on silicon.- On the fractal nature of collision cascades.- Simple statistical models for erosion and growth.- Defects and Disorder.- Defects and defect processes.- Fast-ion-induced defects in silicon studied by deep level transient spectroscopy.- Low-energy (300 eV - 10 keV) Ar+ and Cl+ ion irradiation of (100) Si.- The charge state of iron implanted into sapphire.- Implantation and Mixing.- Direct and recoil implantation, and collisional ion-beam mixing: recent low-temperature experiments.- Mixing by defect-assisted migration of thin markers in solids.- The TRIUMF optically pumped polarized H- ion source.- Some high-current ion sources for materials modification.- Compositional and Chemical Changes.- Bombardment-induced compositional change with alloys, oxides, and oxysalts. I The role of the surface binding energy.- Investigation of preferential sputtering mechanisms by analysing the sample surface and near-surface region with AES and ISS.- High-fluence implantation in insulators. Part I: Compositional, mechanical, and optical changes.- High-fluence implantation in insulators. Part II: Chemical changes.- Electrochemical and corrosion behaviour of ion and laser-beam modified metal surfaces.- Structural Changes.- Ion-irradiation induced phase changes in metallic systems.- The topography of ion-bombarded surfaces.- Cultured blisters.- Electronic Changes.- Electronic properties of ion-implanted metals.- Mechanical Changes.- Tribology of implantation bilayers.- Adhesive and abrasive wear study of nitrogen implanted steels.- Effect of ?-recoil damage on the elastic moduli of zircon and tourmaline.- Depth-resolved investigation of structural transformations and hardness variations in implanted films on bulk samples.- Laser Processing.- Laser etching as an alternative.- Pulsed laser irradiation of heavily Ge implanted silicon.

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Journal ArticleDOI

Plasma and surface modeling of the deposition of hydrogenated carbon films from low-pressure methane plasmas

TL;DR: In this article, elementary mechanisms are described which determine the plasma and surface processes during the plasma-enhanced chemical vapour deposition of hydrogenated carbon films from methane, and corresponding model calculations are reviewed and critically discussed in comparison to experimental results.
Book ChapterDOI

Chemistry of Ice Induced by Bombardment with Energetic Charged Particles

G. Strazzulla
TL;DR: In this article, the authors review the experimental results obtained, in recent years, on physical-chemical effects induced on frozen gases (CO, CO2, CH4, H2O, etc.) and mixtures simulating ice targets in space (frosts on planets, satellites, comets, etc.).
Book ChapterDOI

Energy and Angular Distributions of Sputtered Species

TL;DR: In this paper, the angular distribution of sputtered material is analyzed for a wide variety of target materials (metals, semiconductors, alkali halides, frozen gases, and organic solids).
Journal ArticleDOI

Deep level transient spectroscopy analysis of fast ion tracks in silicon

TL;DR: In this paper, the influence of the irradiation dose on the defect production was investigated together with the depth concentration profiles, and it was shown that the formation of the singly negative charged state of the divacancy dominates defect production for higher doses.
Journal ArticleDOI

Do thermal spikes contribute to the ion‐induced mixing of Ni into Zr, Ti, and Pd?

TL;DR: In this paper, low-temperature ion beam mixing rates for Ni•Ti, Zr•Ni, and Pd•Ni bilayers were found to vary linearly with nuclear damage energy for irradiation with 600 keV Xe, Kr, or Ar, 300 keV Ne or N, or 200 keV N ions, or 1 MeV Au ions.
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