Journal ArticleDOI
Measurements of the Field Effect in Amorphous Switching Materials
TLDR
In this article, conductivity modulation was observed in thin films of chalcogenide glass by applying an electric field through the (mica or plastic) substrate, in agreement with the Seebeck coefficient.Abstract:
Conductivity modulation was observed in thin films of chalcogenide glass by applying an electric field through the (mica or plastic) substrate. At room temperature, the surface potential could be varied through ± 3kT, the surface being always p type, in agreement with the Seebeck coefficient. Comparison of the field‐effect curves with equilibrium space‐charge theory suggests a bulk density of localized states in the range from 1019 to 2 × 1020 cm−3 eV−1 within ± 0.1 eV of the Fermi level.read more
Citations
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Book ChapterDOI
Electronic Properties of Amorphous Semiconductors
TL;DR: The problem of extracting a coherent picture from the experiments of amorphous semiconductors is particularly difficult as mentioned in this paper, since many experiments fail to distinguish between mechanisms of quite different physical origin.
Journal ArticleDOI
The mobility of photo-induced carriers in disordered As2Te3 and As30Te48Si12Ge10
J. M. Marshall,A. E. Owen +1 more
TL;DR: In this article, the drift mobility of charge carriers in radio-frequency sputtered films of As2Te3 and As30Te48Si12Ge10, as determined from the initial rate of rise of the transient photoconductivity, was investigated.
Journal ArticleDOI
Theory and interpretation of the field-effect conductance experiment in amorphous silicon
G. W. Neudeck,A. K. Malhotra +1 more
TL;DR: In this article, the near symmetry of the plots and their change with deposition rate are interpreted in terms of a Cohen-Fritzsche-Ovshinsky type density of states model.
Journal ArticleDOI
Field effect conductance modulation in vacuum−evaporated amorphous silicon films
G. W. Neudeck,A. K. Malhotra +1 more
TL;DR: In this paper, electron-beam vacuum-deposited amorphous silicon films were deposited at controlled rates from 3.1 to 5.6 A/sec onto Si−SiO2 substrates followed by a 4−h 400 °C in situ anneal.
Journal ArticleDOI
Field-effect measurements in disordered As30Te48Si12Ge10 and As2Te3
J. M. Marshall,A. E. Owen +1 more
TL;DR: In this article, the authors presented field effect data for radio-frequency sputtered films of disordered As30Te48Si12Ge10 and As2Te3, and the experimental characteristics were discussed in terms of a variety of possible surface and bulk conditions, and it was shown that the data for both materials imply a higher density of localized states in the region within about 50 A from the surface than that previously determined for the bulk.
References
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Journal ArticleDOI
Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
E. A. Davis,Nevill Mott +1 more
TL;DR: In this article, the experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c and a.c. conductivity, drift mobility and optical absorption.
Journal ArticleDOI
Simple band model for amorphous semiconducting alloys
TL;DR: Amorphous covalent alloys particularly of group-IV, -V, and -VI elements are readily formed over broad ranges of composition and have been described as low-mobility electronic intrinsic semiconductors with a temperature-activated electrical conductivity σ = σ 0×exp(-ΔE/kT) which sometimes extends well into the molten state as discussed by the authors.
Journal ArticleDOI
A qualitative theory of electrical switching processes in monostable amorphous structures
TL;DR: In this article, a double-injection space-charge process was proposed to account for the principal features of amorphous threshold switching, and its applicability to chalcogenide glasses under various operating conditions.
Journal ArticleDOI
Conduction and switching phenomena in covalent alloy semiconductors
TL;DR: In this article, it is suggested that high field breakdown can be triggered by different processes depending on the temperature and the electrode configuration, and the material characteristics yielding the different switching effects.
Journal ArticleDOI
Theory of the Field Effect in Amorphous Covalent Semiconductor Films
TL;DR: In this paper, the effect of surface states on the semiconductor is considered and it is shown that the band bending is exponentially dependent on distance from the surface and the modulation of the surface conductance as a function of transverse field, geometry, and surface state density is calculated.
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