Patent
Method for electrically characterizing the insulator in SOI devices
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TLDR
In this paper, the authors measured the drain current as a function of gate voltage as gate voltage is swept from negative to positive values and showed that the subthreshold voltage current exhibited a minimum drain current occurring close to zero gate voltage.Abstract:
A rapid method for determining electrical characteristics of SOI wafers whereby the silicon substrate acts as a gate and tungsten probes make a source and drain connection at the top silicon surface to form a point contact transistor. Drain current is measured as a function of gate voltage as gate voltage is swept from negative to positive values. The subthreshold voltage current characteristic exhibits a minimum drain current occurring close to zero gate voltage. The tungsten probe point contacts apparently are responding to both electron and hole conduction or simply intrinsic CMOS behavior. Using current voltage characteristics, estimates may be made of interface state density and oxide charge density. Analysis of the gate voltage shift for minimum drain current allows determination of threshold voltage shift due to radiation.read more
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Journal ArticleDOI
Charge separation techniques for irradiated pseudo-MOS SOI transistors
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Patent
Near-intrinsic thin-film SOI FETS
TL;DR: In this article, a submicrometer, near-intrinsic, thin-film, SOI complementary filed effect transistor structure is described, characterized by having a gate comprising material having a work function which approximates its Fermi level to the middle of the band gap of the channel material.
Patent
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Patent
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Patent
Test circuit for measuring specific contact resistivity of self-aligned contacts in integrated circuits
William Thomas Lynch,Kwok K. Ng +1 more
TL;DR: In this article, a test circuit is described for measuring the specific contact resistivity r c of self-aligned electrodes contacting underlying diffused regions at a major surface of an underlying semiconductor wafer, as well as the sheet (lateral) resistance r s of the underlying diffuse regions in some embodiments.
Patent
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