Patent
Method of fabricating silicon carbide (SiC) layer
TLDR
In this paper, a method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X ° C; (S2) carburizating the silicon-bounded substrate with a first hydrocarbon-containing gas at temperature of Y ° C.Abstract:
A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X ° C.; (S2) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y ° C. to form a carbide layer on the silicon-based substrate; (S3) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z ° C.; and (S4) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W ° C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X<Y≦Z≦W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps.read more
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References
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Patent
Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
Yu.N. Makarov,Michael G. Spencer +1 more
TL;DR: An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described in this paper.
Patent
Method for forming a single crystal semiconductor on a substrate
TL;DR: In this paper, a structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed on the surface of the substrate.
Patent
Method of growing a single crystalline beta -SiC layer on a silicon substrate
TL;DR: In this article, a single crystalline silicon carbide (SiC) layer having a thickness greater than 1 mu m is grown on a silicon substrate by the following method of the present invention: the substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes.
Patent
Hardened nano-imprinting stamp
Heon Lee,Gun Young Jung +1 more
TL;DR: A hardened nano-imprinting stamp and a method of forming a hardened nanoimprintING stamp are disclosed in this article, which includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbides.
Patent
Method of growing a single crystalline β-SiC layer on a silicon substrate
TL;DR: In this article, a single crystalline silicon carbide (β-SiC) layer having a thickness greater than 1 μm is grown on a silicon substrate by the following method of the present invention.