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Patent

Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer

TLDR
In this paper, a thermal transfer gas is used to transfer thermal energy between a semiconductor wafer and a platen during processing in a vacuum chamber, and the intermediate region is vacuum pumped to a pressure lower than the pressure in the thermal transfer region whereby leakage of the gas into the vacuum chamber is reduced.
Abstract
Methods and apparatus for differential pumping of a thermal transfer gas used to transfer thermal energy between a semiconductor wafer and a platen during processing in a vacuum chamber. Housing structure defines an intermediate region adjacent to and surrounding the platen. The gas, which is introduced into a thermal transfer region behind the wafer, is restricted from flowing into the intermediate region by intimate contact between the wafer and the platen. A clamping ring, which clamps the wafer to the platen, and a bellows coupled between the clamping ring and the housing restrict flow of gas from the intermediate region to the vacuum chamber. The intermediate region is vacuum pumped to a pressure lower than the pressure in the thermal transfer region whereby leakage of the gas into the vacuum chamber is reduced.

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Patent

Wafer support system

TL;DR: In this paper, a wafer support system consisting of a segmented susceptor having top and bottom sections and gas flow passages therethrough is described, where the sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer.
Patent

Physical vapor deposition clamping mechanism and heater/cooler

TL;DR: In this article, a clamping ring and temperature regulated platen are used for clamping a wafer to the platen and regulating the temperature of the wafer, where a roof shields all but a few contact regions of the interface between wafer and clamp from receiving depositing particles.
Patent

Method and apparatus for electrochemical planarization of a workpiece

TL;DR: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen as mentioned in this paper, which is formed of conductive material.
Patent

Method of supporting a substrate in a gas cushion susceptor system

TL;DR: In this paper, an apparatus and method to position a wafer onto a substrate holder and to maintain a uniform wafer temperature is described, where the substrate holder or susceptor comprises a recess or pocket whose surface includes a grid containing a plurality of grid grooves that separate protrusions.
Patent

Semiconductor producing apparatus comprising wafer vacuum chucking device

TL;DR: In this paper, the main body of a vacuum chuck has a plurality of block grooves on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided.
References
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Patent

Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface

TL;DR: In this paper, an active cooling system for semiconductor wafers during implantation in an ion implantation chamber includes a housing incorporating a convexly curved platen, which has a coating of a pliable thermally conductive material adhered to the surface thereof.
Journal ArticleDOI

Experiments on gas cooling of wafers

TL;DR: In this paper, the applicability of gas cooling of the wafer backside was examined and data showed that very effective cooling can be provided with a heat transfer coefficient of between 20 −50 mW cm−2 C−1 depending on the gas used.
Patent

Cooling apparatus for vacuum chamber

TL;DR: In this article, an apparatus for cooling a workpiece within a vacuum chamber consisting of a housing within said chamber, a cooling medium within said housing having direct contact with said workpiece, and a diaphragm equalizing pressure between said vacuum chamber and the chamber within a housing is described.
Patent

Glass-clear nylons from 3,3'-dimethyl PACM

TL;DR: A glass-clear nylon based on aromatic dicarboxylic acids and dialicyclic diamines is prepared by polycondensing isophthalic acid with a mixture of 3,3'-dimethyl-4,4'-diamino-dicyclohexylmethane and hexamethylenediamine.