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Journal ArticleDOI

Microwave conductivity of polar semiconductors in the presence of a high electric field

H. Kopetz, +1 more
- 08 Mar 1968 - 
- Vol. 4, Iss: 5, pp 79-80
TLDR
Theoretical results for the small-signal microwave conductivity of nInSb at TL = 77°K in the presence of a high d.c. field directed parallel or perpendicular to the microwave field are presented in this article.
Abstract
Theoretical results are presented for the small-signal microwave conductivity of nInSb at TL = 77°K in the presence of a high d.c. field directed parallel or perpendicular to the microwave field. Reasonable agreement with experiments by Richter and Bonek is demonstrated. At frequencies below 50GHz, the parallel microwave conductivity is smaller than the perpendicular one, whereas the opposite is true at 70GHz.

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Citations
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Journal ArticleDOI

On the Anisotropic Microwave Conductivity in the Hot‐Electron Region of n‐InSb

TL;DR: In this paper, it is shown by experiment that the small-signal microwave conductivity of n-type InSb at 77 °K and 35 GHz decreases considerably, when an electric de field in excess of 10 V/cm is applied simultaneously.
Journal ArticleDOI

Millimeter-wave investigation of electronic conduction in semiconducting III-V compounds

TL;DR: In this article, the small-signal microwave conductivity of n-type single-crystal InSb, GaSb and InAs under the influence of a heating dc field was studied experimentally at 4mm waves.
Journal ArticleDOI

Hot‐Electron Anisotropy of Microwave Conductivity in Nonparabolic Semiconductors

TL;DR: In this article, the authors derived an expression for microwave conductivity in parallel and perpendicular orientations to an externally applied, high-dc electric field in III-V semiconductors with nonparabolic energy bands.
Journal ArticleDOI

Transfer functions for sharp cut-off filters with an equalized phase response

TL;DR: In this paper, a method for determining transfer functions of sharp cut-off low-pass and band-pass filters having small pass-band magnitude and group delay distortion is presented, where the minimum phase shift filter section and the all-pass phase equalizer section are designed separately and then connected in cascade.
References
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Journal ArticleDOI

Optical Properties of Semiconductors

TL;DR: In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.
Journal ArticleDOI

Electron scattering in InSb

TL;DR: In this article, the effects of electron scattering by acoustical and optical phonons as well as electron-hole scattering on the mobility and thermoelectric power of intrinsic InSb were investigated.
Journal ArticleDOI

Infrared lattice reflection spectra of III–V compound semiconductors

TL;DR: In this article, the fundamental lattice reflection band of InSb, InAs, GaSb and GaAs has been measured at liquid helium temperature with a grating spectrometer.
Journal ArticleDOI

A study of energy-loss processes in germanium at high electric fields using microwave techniques

TL;DR: In this paper, a theory of the mobility and dielectric constant under the conditions of the experiment is developed; initially an elementary, phenomenological approach is taken, but finally a more refined theory is given which includes specific scattering processes (optical and acoustical phonons).
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