Journal ArticleDOI
Optical Properties of Semiconductors
H. R. Philipp,H. Ehrenreich +1 more
TLDR
In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.Abstract:
Reflectance data are presented for Si, Ge, GaP, GaAs, InAs, and InSb in the range of photon energies between 1.5 and 25 eV. The real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations. The results can be described in terms of interband transitions and plasma oscillations. A theory based on the frequency-dependent dielectric constant in the random phase approximation is presented and used to analyze these data above 12 eV, where the oscillator strengths coupling the valence and conduction bands are practically exhausted. The theory predicts and the experiments confirm essentially free electron-like behavior before the onset of $d$-band excitations and a plasma frequency modified from that of free electrons due to oscillator strength coupling between valence and $d$ bands and $d$-band screening effects. These complications are absent in Si. The energy loss functions obtained from optical and characteristic energy loss experiments are also found to be in good agreement. Arguments for interpreting structure in the reflectance curves above 16 eV in terms of $d$-band excitations are given.read more
Citations
More filters
Journal ArticleDOI
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
David E. Aspnes,A. A. Studna +1 more
TL;DR: In this paper, the pseudodielectric functions of spectroscopic ellipsometry and refractive indices were measured using the real-time capability of the spectro-optical ellipsometer.
Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Journal ArticleDOI
Electro-optics of perovskite solar cells
TL;DR: In this article, the exciton binding energy, dielectric constant and refractive index of planar perovskite solar cells were measured and compared with planar polysilicon solar cells.
Book
Optical Effects of Ion Implantation
TL;DR: In this article, the optical properties of implanted semiconductors, electrooptic components formed by ion implantation, general principles that determine most luminescent systems, effects of implantation temperature, luminescence centers in LiF-Mg-Ti radiation dosimeters, and use of line spectra in defect studies.
Journal ArticleDOI
Optical and photoelectric properties and colour centres in thin films of tungsten oxide
TL;DR: In this paper, the optical absorption spectra of amorphous and crystalline thin Wo3 films have been measured in the temperature range 110° to 500°K and the temperature coefficient of the band edges was found to be − 5.0 × 10−4 eV/°K.