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Journal ArticleDOI

Microwave Harmonic Generation with Hot Electrons in n-Germanium

Shunsuke Kobayashi, +2 more
- 01 Feb 1963 - 
- Vol. 2, Iss: 2, pp 127-127
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This article is published in Japanese Journal of Applied Physics.The article was published on 1963-02-01. It has received 16 citations till now. The article focuses on the topics: High harmonic generation & Germanium.

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Journal ArticleDOI

Primary pressure measurements down to 10−6 Pa

TL;DR: In this article, the primary systems constructed and characterized at IMGC are described; special attention is given to the uncertainty of the parameters involved in the calculation of pressure and to overall uncertainty at different pressure levels.
Journal ArticleDOI

Hot carrier a.c. conductivity and harmonic generation in semiconductors

TL;DR: In this article, the frequency dependence of hot carrier a.c. conductivity of covalent semiconductors is studied considering scattering due to both acoustic and optical phonons.
Journal ArticleDOI

Microwave third harmonic generation in semiconductors at low temperatures

M S Sodha, +1 more
TL;DR: In this paper, the authors investigated the effect of ionized impurity scattering on the amplitude of the third harmonic in a homogeneous semiconductor at low temperatures and showed that the effect is small.
Journal ArticleDOI

Microwave harmonic generation in a plasma-filled waveguide

TL;DR: In this paper, a high-power microwave propagating through a plasma-filled waveguide gives rise to the generation of second and third harmonic waves because of ponderomotive force and energy-dependent collisions, respectively.
Journal ArticleDOI

Microwave third harmonic generation in indium antimonide at low temperatures

TL;DR: Using Boltzmann's transfer equation for electrons, an expression was derived for the third harmonic component in the current density when a plane polarized microwave is normally incident on a free space-semiconductor interface; the ionized impurity scattering is considered as the sole mechanism of electron scattering.