n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
Lisa Liborius,Jan Bieniek,Andreas Nägelein,Franz-Josef Tegude,Werner Prost,Thomas Hannappel,A. Poloczek,Nils Weimann +7 more
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This article is published in Physica Status Solidi B-basic Solid State Physics.The article was published on 2020-02-01 and is currently open access. It has received 2 citations till now. The article focuses on the topics: Nanowire.read more
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Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
Lisa Liborius,Jan Bieniek,Alexander Possberg,Franz-Josef Tegude,Werner Prost,A. Poloczek,Nils Weimann +6 more
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Electrical Properties of the Base‐Substrate Junction in Freestanding Core‐Shell Nanowires
Juliane Koch,Lisa Liborius,Peter Dipl Phys Kleinschmidt,N. Weimann,Werner Prost,Thomas Hannappel +5 more
TL;DR: In this article , an energy dispersive X-ray spectroscopic linescan showed an unintended compositional change of the epitaxially grown coaxial nanowire (NW) toward the planar layers caused by different incorporation mechanisms of Ga and In at the NW base.
References
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Growth of nanowire superlattice structures for nanoscale photonics and electronics.
Mark S. Gudiksen,Lincoln J. Lauhon,Jianfang Wang,David C. Smith,Charles M. Lieber,Charles M. Lieber +5 more
TL;DR: Single-nanowire photoluminescent, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.
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Doping and Electrical Transport in Silicon Nanowires
TL;DR: In this paper, gate-dependent measurements of n-type and p-type silicon nanowires have been made and characterized by electrical transport measurements, and it is shown that the carrier mobility of these materials is consistent with diffusive transport, and that it is possible to heavily dope SiNWs and approach a metallic regime.
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Obtaining the specific contact resistance from transmission line model measurements
G.K. Reeves,H.B. Harrison +1 more
TL;DR: In this article, it was shown that the contact end resistance and the consequent specific contact resistance can be deduced from simple resistance measurements carried out between contacts on a standard, transmission line model test pattern.
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InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
TL;DR: In this article, GaN-nanocolumn-based InGaN/GaN multiple quantum disk (MQD) light-emitting diodes (LEDs) with a novel columnar structure were fabricated on n-type (111) Si substrates.