Journal ArticleDOI
Optical transitions in Zn3P2 within the 0.06–1.4 eV energy range
TLDR
In this article, the multiphonon absorption spectra were observed in the range 0.06-1.4 eV and at temperatures 300 and 80 K. The observed optical transitions were described by means of the Quantum Defect Method.About:
This article is published in Solid State Communications.The article was published on 1986-06-01. It has received 17 citations till now. The article focuses on the topics: Absorption spectroscopy.read more
Citations
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Journal ArticleDOI
II3V2 compounds and alloys
TL;DR: In this paper, a review of progress in crystal and thin films growth of II 3 V 2 materials especially of Zn 3 P 2 and Zn3 As 2 as well as Cd 3-x Zn x As 2 and Cd3As 2-x P x solid solutions is presented.
Journal ArticleDOI
Optical and electrical investigations of imperfection levels in Zn3P2
TL;DR: In this paper, the acceptor levels in Zn3P2 were investigated by optical and electrical methods, and the absorption processes connected with these levels were successfully described by the quantum defect method.
Journal ArticleDOI
Electrical and thermoelectrical properties of Zn3P2 films grown by the hot wall epitaxy technique
TL;DR: In this article, hot wall epitaxy was used to prepare zinc phosphide thin films and the transport properties of these thin films were studied from room temperature up to 600°C.
Journal ArticleDOI
Optical vibrations in the Zn3P2 lattice
TL;DR: In this article, the properties of the one-phonon and multiphonon transitions in Zn3P2 crystals were investigated using reflectivity spectra in the 40-400 cm-1 wavenumber range, absorption spectra, and Raman scattering spectra.
Journal ArticleDOI
Lattice modes of Zn3P2
TL;DR: In this article, the optical spectra of Zn 3 P 2 in the far infrared region (40-700cm -1 ) have been measured at room temperature and at 8K.
References
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Journal ArticleDOI
Deep levels in semiconductors
TL;DR: In this paper, it was shown that the formation of deep localized states in semiconductors can be described with speed and accuracy, and in a self-consistent manner, by exploiting the localized character of the main part of the defect potential.
Journal ArticleDOI
Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in Semiconductors
Journal ArticleDOI
Direct and indirect optical transitions in Zn3P2
TL;DR: In this paper, the effect of the lighting configuration on spectral PV plots is discussed, and the origin of two peaks of PV responses is interpreted as being in accordance with optical data.
Journal ArticleDOI
Defect dominated conductivity in Zn3P2
A. Catalano,R.B. Hall +1 more
TL;DR: In this paper, the electrical resistivity and Hall coefficient of Zn3P2 have been measured for single crystal and thin polycrystalline film samples which were annealed over a range of equilibrium vapor compositions and temperatures.