Patent
Pattern correction method, apparatus, and program
TLDR
In this article, an environmental profile is determined based on whether or not another graphics pattern exists at the surroundings of each correction target cell included in the entered design layout data, and a target cell name is replaced with a prescribed cell name of correction pattern corresponding to the determined environmental profile by referencing a cell replacement table.Abstract:
In a pattern correction method, design layout data of a pattern designed by an automated layout unit is entered. An environmental profile is determined based on whether or not another graphics pattern exists at the surroundings of each correction target cell included in the entered design layout data. A target cell name is replaced with a prescribed cell name of correction pattern corresponding to the determined environmental profile by referencing a cell replacement table. An OPC correction pattern corresponding to the replaced cell name is imported from a cell library.read more
Citations
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Patent
Dynamic array architecture
TL;DR: In this paper, a linear gate electrode track that extends over both a diffusion region and a non-active region of the substrate is defined to minimize a separation distance between ends of adjacent linear gate electrodes segments within the linear-gated electrode track, while ensuring adequate electrical isolation between the adjacent linear gated electrode segments.
Patent
Method of IC fabrication, IC mask fabrication and program product therefor
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References
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Patent
General purpose shape-based layout processing scheme for IC layout modifications
TL;DR: In this article, a shape can be defined by a set of associated edges in a specified configuration, and a catalog of shapes is defined and layout processing actions are associated with the various shapes.
Patent
Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
Christophe Pierrat,Youping Zhang +1 more
TL;DR: In this article, a dissection length parameter is derived based on a profile of amplitudes output by a proximity effects model along a transect, and then it is determined how to correct at least a portion of the first edge for proximity effects based on an analysis at the evaluation point.
Patent
System and method for preparing shape data for proximity correction
TL;DR: In electron beam lithography, an apparatus and method decompose rectangles at the exterior of a desired electron beam exposure pattern into portions having a substantially constant environment, and then the resulting rectangles indicate the edge(s) of the rectangle at which cuts were made to form the rectangle as discussed by the authors.
Patent
Conducting automatic correction processing
TL;DR: In this paper, a correction target segment extracted from the design pattern is divided into lengths suited for correction, and a correction value is obtained by two-dimensionalally extracting a pattern included in a rectangular region having a predetermined distance from one point on the divided segment in perpendicular and horizontal directions.
Patent
Proximity correction system for wafer lithography
TL;DR: In this paper, a system for computing a pattern function for a polygonal pattern having a finite number of predetermined face angles is presented, which includes the steps of decomposing the polygon into a set of flashes, computing the pattern function by summing together all flashes evaluated at a point (x,y), and returning a 1 if a point is inside a polygons and otherwise will return a 0.