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Journal ArticleDOI

Phonon Broadening of Impurity Lines

E. O. Kane
- 01 Jul 1960 - 
- Vol. 119, Iss: 1, pp 40-42
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TLDR
In this paper, the theory of line broadening given by Lax is found not to apply to shallow impurities in Ge and Si and observed broadening may be instrumental at low temperatures and may be due to lifetime broadening through phonon interaction at nitrogen temperature.
Abstract
The theory of line broadening given by Lax is found not to apply to shallow impurities in Ge and Si. Observed broadening may be instrumental at low temperatures and may be due to lifetime broadening through phonon interaction at nitrogen temperature. Calculations suggest that $p$-type spin resonance in germanium and silicon may be observable.

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Book ChapterDOI

g Factors and Spin-Lattice Relaxation of Conduction Electrons

TL;DR: The use of spin resonance in semiconductors and semimetals grows as better materials are made and detailed knowledge about their band structure becomes available as discussed by the authors. But spin resonance does not play a useful supplementary role when something about the band structure is known, serving either as a check on the band model or determining the values of additional parameters.
Journal ArticleDOI

Linewidth and Temperature Shift of the R Lines in Ruby

TL;DR: Improved experimental data have been obtained between 20° and 350°K for the widths and temperature shifts of the R lines in ruby as mentioned in this paper, which can be accurately described in terms of Raman scattering of Debye-model phonons.
Journal ArticleDOI

Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors

TL;DR: In this paper, the authors discuss the electronic energy levels of chemical impurities in the classic group IV elemental and the III-V and II-VI compound semiconductors and discuss the experimental results on the spectroscopy of donors and acceptors.
Book ChapterDOI

The Jahn-Teller Effect in Solids*

TL;DR: The Jahn-Teller effect as discussed by the authors is the intrinsic instability of an electronically degenerate complex against distortions that remove the degeneracy, and it has been applied to the particular problem of a doubly degenerate electronic state interacting with a triply degenerate vibrational mode.
Journal ArticleDOI

Phonon-assisted transition rates I. Optical-phonon-assisted hopping in solids

TL;DR: In this paper, an extensive calculation of the optical-phonon-assisted transition rates for non-adiabatic electronic hopping motion in a solid is presented, which involves no restrictions on either the magnitude of the electron-lattice coupling strength, the temperature or the difference between the electronic energies of the initial and final sites.