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Patent

Plasma monitoring apparatus

Yasuhiro Nishimori, +2 more
TLDR
In this article, an impedance matcher for monitoring a condition of plasma of a plasma load to which power is supplied from a high frequency power source through a high-frequency power source provides with a first-input impedance calculator for calculating an impedance as a first input impedance from a supply-side terminal of the matcher to the plasma load-side based on voltage, current and phase difference detected at the supply side terminal.
Abstract: 
A plasma monitoring apparatus for monitoring a condition of plasma of a plasma load to which power is supplied from a high frequency power source through an impedance matcher provides with a first input impedance calculator for calculating an impedance as a first input impedance from a supply-side terminal of the matcher to the plasma load-side based on voltage, current and phase difference detected at the supply-side terminal of the matcher, a second input impedance calculator for calculating an impedance as a second input impedance from a load-side terminal of the matcher to the plasma load based on a impedance of a element of the matcher and the first input impedance and a plasma impedance calculator for calculating an impedance of the plasma load from the second input impedance and an impedance of a supply-side connecting the matcher and the plasma load.

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Citations
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Patent

Capacitively coupled plasma reactor with magnetic plasma control

Daniel J. Hoffman, +6 more
TL;DR: In this paper, the authors describe a plasma reactor with a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece supports and the ceiling together defining a processing region between the support and ceiling, where a current source is connected to the first solenoidal electromagnet and furnishes a first electric current.
Patent

Plasma reactor with overhead rf electrode tuned to the plasma with arcing suppression

Daniel J. Hoffman, +7 more
TL;DR: In this paper, the authors proposed a plasma reactor for processing a semiconductor workpiece, which includes an overhead electrode overlying a workpiece support, an electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within a desired plasma ion density level.
Patent

Impedance matching device provided with reactance-impedance table

Yasuhiro Nishimori, +4 more
TL;DR: In this article, an impedance matching device is provided with an input detector for detecting RF voltage and current at the input terminal, and an output detector to detect RF voltage outputted from the output terminal.
Patent

Control of plasma transitions in sputter processing systems

Jeff C. Sellers
TL;DR: In this article, a sensor for acquiring a signal associated with a state of a plasma in the plasma vessel supports closed-loop control of the switch unit to shunt the resonant circuit.
Patent

Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface

Douglas A. Buchberger, +5 more
TL;DR: In this paper, an overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor, and a gas supply manifold within the electrode extends radially across the electrode.
References
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Patent

Radio frequency monitor for semiconductor process control

Norman Williams, +1 more
TL;DR: In this article, a RF sensor for monitoring voltage, current and phase angle of a RF signal being coupled to a plasma reactor is used to calculate various properties of the plasma, which are then utilized to characterize the process and/or used to provide feedback for in-situ control of an ongoing plasma process.
Patent

Apparatus and method for determining power in plasma processing

John H. Thomas, +1 more
TL;DR: In this paper, the average or root-mean-square current delivered to a plasma generating electrode from a radio frequency (RF) power source was measured using an infrared sensor. But the infrared sensor was not used to measure the phase angle of the current.
Patent

Power monitor of RF plasma

Theodore E. Johnson, +1 more
TL;DR: An RF plasma power monitor that monitors voltage, current and DC bias adjacent the plasma load and processes the sensed data in a digital data processor to provide true power at the load is presented in this paper.
Patent

Stable matching networks for plasma tools

Dennis K. Coultas, +1 more
TL;DR: In this paper, the authors present an approach and method for obtaining stable matching networks for plasma tools for use in the plasma processing industry, running at a matched condition for a transmission line and the plasma tool matching network such that the input impedance at the input to the transmission line is different than that of the output impedance of an RF generator.