Polarization rotator-splitters and controllers in a Si3N4-on-SOI integrated photonics platform.
Wesley D. Sacher,Ying Huang,Liang Ding,Tymon Barwicz,Jared C. Mikkelsen,Benjamin Taylor,Guo-Qiang Lo,Joyce K. S. Poon +7 more
TLDR
Novel polarization management devices in a custom-designed silicon nitride (Si(3)N(4)) waveguides on silicon-on-insulator (SOI) integrated photonics platform are demonstrated.Abstract:
We demonstrate novel polarization management devices in a custom-designed silicon nitride (Si(3)N(4)) on silicon-on-insulator (SOI) integrated photonics platform. In the platform, Si(3)N(4) waveguides are defined atop silicon waveguides. A broadband polarization rotator-splitter using a TM0-TE1 mode converter in a composite Si(3)N(4)-silicon waveguide is demonstrated. The polarization crosstalk, insertion loss, and polarization dependent loss are less than -19 dB, 1.5 dB, and 1.0 dB, respectively, over a bandwidth of 80 nm. A polarization controller composed of polarization rotator-splitters, multimode interference couplers, and thin film heaters is also demonstrated.read more
Citations
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Journal ArticleDOI
Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices
TL;DR: In this paper, the authors present results from multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm.
Journal ArticleDOI
Multimode silicon photonics
Chenlei Li,Dajian Liu,Daoxin Dai +2 more
TL;DR: In this article, a review of the recent progresses of multimode silicon photonic devices and circuits is given, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends and crossings.
Journal ArticleDOI
Wide bandwidth and high coupling efficiency Si3N4-on-SOI dual-level grating coupler.
Wesley D. Sacher,Ying Huang,Liang Ding,Benjamin Taylor,Hasitha Jayatilleka,Guo-Qiang Lo,Joyce K. S. Poon +6 more
TL;DR: Fiber-to-chip grating couplers with aligned silicon nitride (Si(3)N(4)) and silicon (Si) grating teeth for wide bandwidths and high coupling efficiencies without the use of bottom reflectors are proposed and experimentally demonstrated.
Journal ArticleDOI
CMOS compatible monolithic multi-layer Si_3N_4-on-SOI platform for low-loss high performance silicon photonics dense integration
TL;DR: A low-loss CMOS-compatible multi-layer platform using monolithic back-end-of-line (BEOL) integration is demonstrated, achieving less than 0.2dB/transition loss across 70nm bandwidth, the lowest inter-layer transition loss ever reported.
Journal ArticleDOI
Silicon Nanophotonic Integrated Devices for On-Chip Multiplexing and Switching
TL;DR: A review is given on recent progresses in silicon nanophotonic integrated devices for multiplexing and switching, which are key elements in a multichannel multiplexed photonic networks-on-chip.
References
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Tymon Barwicz,Michael R. Watts,Michael R. Watts,Miloš A. Popovi cacute,Peter T. Rakich,Luciano Socci,Franz X. Kärtner,Erich P. Ippen,Henry I. Smith +8 more
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Fahmida Ferdous,Houxun Miao,Houxun Miao,Daniel E. Leaird,Kartik Srinivasan,Jian Wang,Lei Chen,Leo T. Varghese,Andrew M. Weiner +8 more
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Journal ArticleDOI
Octave-spanning frequency comb generation in a silicon nitride chip
TL;DR: A frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q silicon nitride microring resonator is demonstrated and it is found that the comb can operate in a low-noise state with a 30 dB reduction in noise as the pump frequency is tuned into the cavity resonance.
Journal ArticleDOI
Ultra-low-loss high-aspect-ratio Si3N4 waveguides.
Jared F. Bauters,Martijn J. R. Heck,Demis D. John,Daoxin Dai,Ming-Chun Tien,Jonathon S. Barton,Arne Leinse,Rene Gerrit Heideman,Daniel J. Blumenthal,John E. Bowers +9 more
TL;DR: An approach to make ultra-low-loss waveguides using stable and reproducible stoichiometric Si3N4 deposited with low-pressure chemical vapor deposition is characterized, projecting that 0.1 dB/m total propagation loss is achievable at a 7 mm bend radius with this approach.
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