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Open AccessJournal ArticleDOI

CMOS compatible monolithic multi-layer Si_3N_4-on-SOI platform for low-loss high performance silicon photonics dense integration

TLDR
A low-loss CMOS-compatible multi-layer platform using monolithic back-end-of-line (BEOL) integration is demonstrated, achieving less than 0.2dB/transition loss across 70nm bandwidth, the lowest inter-layer transition loss ever reported.
Abstract
We demonstrated a low-loss CMOS-compatible multi-layer platform using monolithic back-end-of-line (BEOL) integration. 0.8dB/cm propagation loss is measured for the PECVD Si3N4 waveguide at 1580nm wavelength. The loss is further reduced to 0.24dB/cm at 1270nm wavelength, justifying the platform’s feasibility for O-band operation. An inter-layer transition coupler is designed, achieving less than 0.2dB/transition loss across 70nm bandwidth. This is the lowest inter-layer transition loss ever reported. A thermally tuned micro-ring filter is also integrated on the platform, with performance comparable to similar device on SOI platform.

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Citations
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Journal ArticleDOI

Review of Silicon Photonics Technology and Platform Development

TL;DR: In this article, the authors provide a comprehensive review of the development of silicon photonics and the foundry services which enable the productization, including various efforts to develop and release PDK devices.
Journal ArticleDOI

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

TL;DR: In this paper, the advantages and challenges associated with these two material platforms are discussed, and the case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented.
Journal ArticleDOI

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

TL;DR: A review of the state of the art of silicon Nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform.
Journal ArticleDOI

Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices

TL;DR: In this paper, the authors present results from multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm.
Journal ArticleDOI

Open-Access Silicon Photonics: Current Status and Emerging Initiatives

TL;DR: An overview of existing and upcoming commercial and noncommercial open-access silicon photonics technology platforms is presented and the diversity in these open- access platforms and their key differentiators are discussed.
References
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Journal ArticleDOI

Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization

TL;DR: In this paper, a low-thermal-budget postepitaxy anneal was introduced to improve the performance of the Ge photodetectors, thus resulting in significantly improved dark current.
Journal ArticleDOI

Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect

TL;DR: Compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm, fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.
Journal ArticleDOI

Ultralow Power Silicon Photonics Thermo-Optic Switch With Suspended Phase Arms

TL;DR: In this article, a 2 × 2 thermo-optic waveguide-based switch with ultralow power consumption is demonstrated and fabricated using a standard complementary metal-oxide-semi conductor (CMOS) process.
Journal ArticleDOI

Silicon on ultra-low-loss waveguide photonic integration platform.

TL;DR: A novel integrated silicon and ultra-low-loss Si3N4 waveguide platform with minimum propagation loss measured in the ultra- low-loss waveguides is 1.2 dB/m in the 1590 nm wavelength regime.
Journal ArticleDOI

Scalable 3D dense integration of photonics on bulk silicon.

TL;DR: In this article, a vertically stacked, multi-layer, low-temperature deposited photonics for integration on processed microelectronics is presented, where waveguides, microrings, and crossings are fabricated out of 400°C PECVD Si3N4 and SiO2 in a two layer configuration.
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