Patent
Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects
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TLDR
In this article, a TiN local interconnect system is used to connect the two types of gates, as well as providing connections to moat, in a process for making CMOS device wherein the N-channel devices have n+ gates, and the P-Channel devices have p+ gates.Abstract:
A process for making CMOS device wherein the N-channel devices have n+ gates, and the P-channel devices have p+ gates. A TiN local interconnect system is used to connect the two types of gates, as well as providing connections to moat. A titanium nitride layer may be formed by depositing titanium metal everywhere, and then heating the integrated circuit structure in a nitrogen atmosphere. This process may also be used with other refractory metal nitride interconnect layers. In addition to titanium based thin film compositions, other metals can be substituted and used for direct-react silicidation and simultaneous formation of a conductive nitride to form local interconnects, including molybdenum, tungsten, vanadium, cobalt, and others.read more
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References
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Patent
Process for patterning local interconnects
TL;DR: In this article, a local interconnect system for VLSI integrated circuits is described, where a hardmask is applied to the exposed moat and gate regions in a nitrogen atmosphere.
Patent
High-voltage CMOS process
TL;DR: In this paper, a double-well process in an epitaxial structure is used for high-voltage CMOS process, providing both field thresholds and junction breakdowns in excess of 20 volts, wherein only one channel stop implant is used.
Patent
Integrated circuit process with TiN-gate transistor
TL;DR: In this paper, the authors describe an integrated circuit process which includes forming two types of active devices: a first set of IGFETs has silicide gates, and the second set has TiN gates.
Patent
Process to increase tin thickness
TL;DR: In this article, a local interconnect system for VLSI integrated circuits is described, where a conductive titanium nitride layer is formed overall and a second titanium layer is then reacted, to thicken the oxide layer without increasing the thickness of the silicide layers.
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Pretreatment of photoresist masking layers resulting in higher temperature device processing
TL;DR: In this paper, an organic compound film such as photoresist films is suitably treated to become a heat resistant film and used in various production processes as a mask pattern at a temperature of more than 200° C. without deforming the original size of the mask pattern.