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Journal ArticleDOI

Proposal of Electro-Optical Switching and Memory Devices Utilizing Doping and Undoping Processes of Conducting Polymers

TLDR
In this paper, new optical switching and memory elements utilizing the spectral change of conducting polymers by electro-chemical doping and undoping are proposed, which can be used for memory elements.
Abstract
New optical switching and memory elements utilizing the spectral change of conducting polymers by electro-chemical doping and undoping are proposed.

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Citations
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Molecular Engineering of the Band Gap of π-Conjugated Systems: Facing Technological Applications

TL;DR: In this article, the authors present an overview of the recent trends in gap engineering in field-effect transistors, light-emitting diodes, electrochromic devices and solar cells.
Journal ArticleDOI

Polymer films formed with monolayer growth steps by molecular layer deposition

TL;DR: In this paper, pyromellitic dianhydride (A) and 2,4-diaminonitrobenzene (B) were used for layer deposition.
Journal ArticleDOI

Dependences of electrical and mechanical properties of conducting polypyrrole films on conditions of electrochemical polymerization in an aqueous medium

TL;DR: In this paper, the electrical and mechanical properties of polypyrrole films under various polymerization conditions were studied and the electrical conductivity was found to be increased to higher than 500 S/cm by selecting the polymerization condition.
Journal ArticleDOI

Enhanced photoconductivity of C60 doped poly(3-alkylthiophene)

TL;DR: In this article, the photoconductivity of poly(3-alkylthiophene) was found to be remarkably enhanced upon C 60 doping, and the decay time of photoconduction became shorter.
References
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Journal ArticleDOI

Electronic structure of polyacetylene: Optical and infrared studies of undoped semiconducting (CH) x and heavily doped metallic (CH) x

TL;DR: In this article, a Kramers-Kronig analysis of the reflection data has been carried out to obtain an intrinsic dc conductivity for metallic polyacetylene polysilicon.
Journal ArticleDOI

Formation of Semiconductive Metal-Sulfide at Interface of (SN) x -Metal Junction

TL;DR: In this article, the electrical properties of semiconductive metal-sulfides such as Cu2S, Ag2S etc. are studied and shown to be formed at the interface between (SN)x and various metals.
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