Patent
Quantum-dot infrared photodetector
TLDR
In this article, a quantum-dot infrared photodetector comprises a semiconductor substrate, a buffer layer, an undoped first obstructing layer formed on the buffer layer and a doped second contact layer.Abstract:
A quantum-dot infrared photodetector comprises a semiconductor substrate; a buffer layer formed on the semiconductor substrate; an undoped first obstructing layer formed on the buffer layer; a first quantum-dot layer formed on the first barrier layer; a heavily doped first contact layer formed on the first quantum-dot layer; a second quantum-dot layer formed on the first contact layer; an undoped second obstructing layer formed on the second quantum-dot layer; and a doped second contact layer formed on the second quantum-dot layer. In another embodiment, the first obstructing layer and the second obstructing layer may be formed optionally. The quantum-dot photodetector may increase photo current and constrict dark current such that detectability is improved and the operation temperature can be increased.read more
Citations
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Journal ArticleDOI
Quantum Dot Based Infrared Focal Plane Arrays
TL;DR: The progress from the first raster scanned image obtained with a QD detector to the demonstration of a 640 512 imager based on self-assembled quantum dots (QDs) is reviewed and emphasis will be placed on a novel quantum dots-in-a-well (DWELL) design, which represents a hybrid between a conventional quantum-well infrared photodetector (QWIP) and a quantum-dot infrared photodiode (QDIP).
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Quantum dot-fullerene junction based photodetectors
Ethan J. D. Klem,John Lewis +1 more
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References
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Patent
Quantum dot infrared photodetector focal plane array
TL;DR: In this article, techniques using QDIP technology to form imaging focal plane arrays capable of sensing one or more colors are disclosed, which enables the generation of an IR image that could be used for applications such as surveillance, night vision, and search and rescue operations.
Patent
Quantum dot infrared photodetectors (qdip) and methods of making the same
Simon Fafard,Hui Chun Liu +1 more
TL;DR: In this article, a photodetector capable of normal incidence detection over a broad range of long-wavelength light signals was proposed. But it was not shown to be able to convert infrared light into electrical signals without the assistance of light coupling devices or schemes.
Journal ArticleDOI
Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12μm atmospheric window via rapid thermal annealing
TL;DR: In this paper, the authors reported wide spectral tunability of narrow-band (Δλ∕λ∼12%) InAs∕In0.15Ga0.85As ∕GaAs quantum dot-in-a-well infrared photodetectors using postgrowth rapid thermal annealing.
Patent
Quantum dot infrared photodetector and method for fabricating the same
TL;DR: In this paper, a method for fabricating a quantum dot infrared photodetector by using molecular beam epitaxy is presented, which includes steps of growing a first gallium arsenide layer as a buffer layer on a gallium- arsenide substrate, growing the first undoped aluminum gallium sulfide (AGS) layer as blocking layer on the first GCS layer, and growing a second GCS as a contact layer on quantum dot structure layer.