Patent
Quantum well multijunction photovoltaic cell
TLDR
In this article, a monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a pregion on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n- type in the nregion; each of said series of layers comprising alternating barrier and quantum well layers.Abstract:
A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.read more
Citations
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References
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Journal ArticleDOI
Molecular beam epitaxy.
TL;DR: In this paper, a combination of lattice-matched semiconductors, GaAs and Al x -Ga l-x As, was used to demonstrate a large variety of novel single-crystal structures.
Patent
Solar cells employing stacked opposite conductivity layers
TL;DR: In this paper, a cell for converting received light energy to electrical energy comprises, in the simplest embodiment, four layers of differing types of semiconductive material stacked so as to form three opposite conductivity junctions.
Patent
Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same
TL;DR: In this paper, the authors describe a gallium aluminum arsenide-gallium arsenide and germanium-germanium solar cell and fabrication process where the deposition of a layer of gallium aluminium arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of the gallium arsenides substrate.
Patent
Shallow-homojunction solar cells
TL;DR: In this article, improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed.
Patent
Graded bandgap multilayer avalanche photodetector with energy step backs
TL;DR: In this paper, a multistage avalanche photodetector in which the ionization energy is provided by an energy band discontinuity is described, which provides low noise optical detection at low voltage.