Journal ArticleDOI
Radiative recombination at deep impurity centres in AlN:O
S. Pačesová,L. Jastrabík +1 more
TLDR
In this paper, the ionization energy of the deep donor states due to oxygen and of the acceptor levels due to compensating VA1 vacancies were determined from the optical properties of AlN:O.Abstract:
The ionization energy of the deep donor states due to oxygen and of the acceptor levels due to compensating VA1 vacancies were determined from the optical properties of AlN:O. The theoretical calculations together with the experimental data (the emission spectra, the excitation of luminescence spectra and EPR data) indicate that the deepest donor level belongs to the ion O−.read more
Citations
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Progress and prospects of group-III nitride semiconductors
S.N Mohammad,Hadis Morkoç +1 more
TL;DR: In this paper, the authors review recent progress in the group-III nitride and related materials, and electronic and optical devices based on them, focusing on the current status of wide bandgap gallium nitride, and related semiconductors from both the materials and devices points of view.
Journal ArticleDOI
On the nature of the oxygen-related defect in aluminum nitride
TL;DR: In this article, the oxygen-related defect in an aluminum nitride (AIN) single crystal and in polycrystalline ceramics was investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements, and transmission electron microscopy.
Journal ArticleDOI
Luminescence Studies of Oxygen-Related Defects In Aluminum Nitride
Journal ArticleDOI
Optical characterization of aln films grown by plasma source molecular beam epitaxy
TL;DR: In this paper, thin films of AlN were grown on Si(111), sapphire (1102), and sappire (0001) substrates by plasma source molecular beam epitaxy (PSMBE), and the optical phonon modes of thin AlN/Si films were directly observed in infrared transmission and 80° angle of incidence reflectance spectra.
Journal ArticleDOI
Thermoluminescence kinetics of oxygen-related centers in AlN single crystals
TL;DR: In this article, the authors studied the thermoluminescence (TL) in bulk aluminum nitride single crystals irradiated by UV and found that TL is most effectively excited by the 5.04 eV photons.
References
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Journal ArticleDOI
Epitaxially grown AlN and its optical band gap
TL;DR: In this article, singlecrystal layers of AlN have been grown on sapphire substrates between 1000 and 1100 °C by vapor phase reaction of aluminum chlorides with ammonia, and the purity, color, crystallinity, growth morphology, and electrical resistivity of the epitaxial layers have been investigated.
Journal ArticleDOI
Ain single crystals
Glen A. Slack,T.F. McNelly +1 more
TL;DR: In this article, single crystals of aluminum nitride up to 1 cm long and 0.3 in diameter have been grown by a sublimation-recondensation technique at about 2250°C.
Journal ArticleDOI
The electronic band structures of the wide band gap semiconductors GaN and A1N
D. Jones,A.H. Lettington +1 more
TL;DR: In this paper, a non-local model potential was developed for nitrogen and used to calculate the energy band structures of GaN and A1N and the resulting band structures were found to be in good agreement with optical data for these materials.
Journal ArticleDOI
Ultraviolet electroluminescence in AlN
TL;DR: In this article, a method of growing single-crystal low resistivity (∼103 Ω cm) n-type AlN is described in which dc ultraviolet electroluminescence is observed for the first time.
Journal ArticleDOI
The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
F. Karel,J. Pastrňák +1 more
TL;DR: In this paper, the emission spectra of self-, Mn-, Eu- and Sm-activated AlN luminophores under ultraviolet and cathode ray excitation as well as the excitation spectra for Mn and self-activated phosphors are measured.