Patent
Semiconductor device with buried inverse T-type field region
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TLDR
In this paper, the effect of accurate insulation between the devices and the pn junction area can be decreased, so that the junction capacitance becomes decreased, and the leakage current due to the damage of the edge is not generated.Abstract:
The present invention relates to a semiconductor and a method for fabrication thereof and particularly to a semiconductor having a field oxide having a shape such that the lower part is wider that the upper part. Therefore, according to the present invention, the ion implantation process for forming a channel stop region becomes unnecessary, because of the effect of accurate insulation between the devices and the pn junction area can be decreased, so that the junction capacitance becomes decreased. Furthermore, because LOCOS edge does not coincide with the junction edge, the leakage current due to the damage of the edge is not generated. Because a field oxide is of the buried inverse T-type, the effective width of the device is increased more than that of a mask. Because the bird's beak is not generated, the problem due to the narrow width can be settled.read more
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References
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Semiconductor integrated circuit with isolation region made of dielectric material
TL;DR: In this paper, a semiconductor integrated circuit includes pouch-shaped (in sectional view) isolation regions made of dielectric material consisting of boron and phosphor doped silicate glass.
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Method of forming isolated island regions in a semiconductor substrate by selective etching and oxidation and devices formed therefrom
TL;DR: In this paper, a method of fabricating a semiconductor device comprises the steps of forming oxidation-resistive films on the surface and sides of a protrusion formed on the semiconductor substrate, forming grooves at the bottom of the sides of the protrusion, forming highly doped impurity diffusion regions in the groove surfaces, and subjecting the grooves to selective oxidation to form an oxide film under the bottom surface of protrusion.