Patent
Substrate processing method, storage medium storing program for executing substrate processing method and substrate processing apparatus
TLDR
In this paper, a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent.Abstract:
There is provided a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent. The substrate processing method includes a rinse solution supply process (step S 12 ) for supplying the rinse solution onto the substrate on which the resist pattern is formed; and a rinse solution removing process (steps S 14 to S 16 ) for removing the rinse solution from the substrate in an atmosphere including vapor of a first processing solution that hydrophobicizes the resist pattern.read more
Citations
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Patent
Semiconductor processing system and methods using capacitively coupled plasma
Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Patent
Semiconductor processing systems having multiple plasma configurations
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Patent
Methods for etch of metal and metal-oxide films
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
Patent
Methods for etch of sin films
TL;DR: In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.
Patent
Processing systems and methods for halide scavenging
Anchuan Wang,Xinglong Chen,Zihui Li,Hiroshi Hamana,Zhijun Chen,Ching-Mei Hsu,Jiayin Huang,Nitin K. Ingle,Dmitry Lubomirsky,Shankar Venkataraman,Randhir Thakur +10 more
TL;DR: In this article, a system, chambers, and processes are provided for controlling process defects caused by moisture contamination in a vacuum or controlled environment, and the chambers may include configurations to provide additional processing capabilities in combination chamber designs.
References
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Patent
Method and apparatus for removing a liquid from a surface
TL;DR: In this paper, a method and an apparatus for removing a liquid, i.e. a wet processing liquid, from one surface of at least one substrate is disclosed. But this method requires the substrate to be subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate.
Patent
Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing
TL;DR: In this paper, an integrated module (11) with a heated reservoir (44) to vaporize liquid for semiconductor processes with liquid sources is presented, where shutoff valves and a proportioning pressure valve are mounted on the module for simple conduction heating of the valves.
Patent
Method for preventing tilting of photoresist pattern in developing step
TL;DR: In this article, the authors proposed to prevent tilting of a resist pattern in the step of developing a fine resist pattern by adding surfactant to at least one of developer and rinsing solution, and lowering its surface tension of the liquid.
Patent
Substrate processing method and substrate processing apparatus
TL;DR: In this article, the authors presented a substrate processing method with long brushes (221) consisting of a large number of bristles and a transfer roller for transferring a substrate to the brushes in an intersecting direction with an extending direction of the brushes.
Patent
Washing method and apparatus therefor
Kinya Ueno,欽也 上野 +1 more
TL;DR: In this article, a wafer is held on a rotation mounting part 3 and rotated at 80rpm, a hydrofluoric acid solution 60 is supplied from a nozzle 6 to the surface of the wafer W, pure water 70 is supplied to W for washing, and isopropyl alcohol(IPA) 80 is supplied immediately before the supply stop of the pure water70.