Patent
Switching field effect transistor using abrupt metal-insulator transition
Hyun-Tak Kim,Kwang-Yong Kang +1 more
TLDR
A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, undergoing abrupt metal-insulator transition when holes added therein this paper.Abstract:
A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.read more
Citations
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2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
Hyun-Tak Kim,Doo Hyeb Youn,Byung-Gyu Chae,Kwang Yong Kang,Yong-Sik Lim,Gyungock Kim,Sunglyul Maeng,Seong Hyun Kim +7 more
TL;DR: In this article, an abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer, and a second electrode is disposed on abrupt MIT organic or inorganic material layer.
References
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Journal ArticleDOI
Mott transition field effect transistor
TL;DR: In this paper, a field effect transistor fabricated with an oxide channel has been shown to demonstrate switching characteristics similar to conventional silicon metal oxide field effect transistors, operating via a Mott metal-insulator transition induced by the gate field, and offers a potential technology alternative for the regime beyond silicon scaling limitations.
Patent
Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications
TL;DR: In this article, a device includes first and second contacts formed on a channel material, a film of doped first insulator material interposed between the first-and second contacts, and a second insulator interfaced with the doped 1-insulator material with an area of said channel material there between.
Patent
Ferroelectric element and method of producing the same
TL;DR: In this article, a ferroelectric element is provided that can be highly densely integrated having a high Pr and a small Ec by using a Ferroelectric thin film of the perovskite structure.
Patent
Process for fabrication of an all-epitaxial-oxide transistor
TL;DR: In this article, a method and structure of forming an integrated circuit chip having a transistor includes forming a conductive oxide layer, forming a Mott transition oxide layer over the conductive layer and forming an insulative oxide layer on top of the transition layer.
Patent
Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
TL;DR: In this article, a ferroelectric memory cell formed on a monocrystalline silicon underlayer, either an epitaxial silicon contact plug to a transistor source or drain or silicon gate region for which the memory cell forms a non-volatile gate, is presented.