scispace - formally typeset
Patent

System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)

Tony P. Chiang, +1 more
TLDR
In this article, an enhanced sequential atomic layer deposition (ALD) technique was proposed for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high-k films, and other conductive, semi-conductive, and nonconductive films.
Abstract: 
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

read more

Citations
More filters
Patent

Substrate Processing Apparatus

Tamami Takahashi, +5 more
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
Patent

Apparatus and method for plasma assisted deposition

Chen-An Chen, +4 more
TL;DR: In this paper, the authors present an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region, where a power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top and bottom shower plates.
Patent

Gas delivery apparatus for atomic layer deposition

Ling Chen, +6 more
TL;DR: In this paper, an apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition, is provided. But this method is not suitable for high-dimensional data.
Patent

Apparatus and process for plasma-enhanced atomic layer deposition

Paul F. Ma, +6 more
TL;DR: In this article, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen, and the insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas regions with the groove.
Patent

Plasma uniformity control by gas diffuser hole design

Soo Young Choi, +9 more
TL;DR: In this paper, a gas diffuser plate for distributing gas in a processing chamber is described, which includes a diffuser with an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser.
References
More filters
Patent

Plasma processing apparatus

Nishikawa Kazuyasu, +2 more
TL;DR: In this paper, the problem of providing a plasma processing apparatus with a gas feed means which feeds gas in pulses into a reaction chamber, where the processing speed and shape of a sample can be set uniform through all its surface, even if an ultrasonic free flow is not established.
Patent

Sequential chemical vapor deposition

Arthur Sherman
TL;DR: In this article, the authors proposed a method for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve.
Patent

Processing chamber for atomic layer deposition processes

Kenneth Doering, +3 more
TL;DR: In this paper, a processing station adaptable to standard cluster tools has a vertically-translatable pedestal having an upper wafer-support surface including a heater plate adapted to be plugged into a unique feedthrough in the pedestal.
Patent

Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)

Tony P. Chiang, +1 more
TL;DR: In this paper, an enhanced sequential atomic layer deposition (ALD) technique was proposed for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high-k films, and other conductive, semi-conductive, and nonconductive films.
Patent

Plasma enhanced pulsed layer deposition

Tue Nguyen
TL;DR: In this article, a process system and a deposition method for depositing a highly controlled layered film on a workpiece is described, which can be either exciting or not-exciting a first precursor.