Journal ArticleDOI
Tandem type amorphous solar cells
Genshiro Nakamura,Kazuhiko Sato,Takashi Ishihara,Masaaki Usui,Kazuhiro Okaniwa,Yoshinori Yukimoto +5 more
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TLDR
In this article, a three-stacked tandem type amorphous solar cell which consists of aSi:H and a-SiGe:H with a size of 10 by 10 cm was obtained.Abstract:
An efficiency of 8.6 % by the three-stacked tandem type amorphous solar cell which consists of a-Si:H and a-SiGe:H with a size of 10 by 10 cm was obtained. This tandem type solar cell showed stable characteristics for the prolonged light exposure.read more
Citations
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Journal ArticleDOI
Carrier lifetime model for the optical degradation of amorphous silicon solar cells
TL;DR: In this article, the degradation of amorphous silicon solar cells is described by a model in which the carrier lifetimes are determined by the dangling bond density, and the degradation will be slower in solar cells operating at lower excess carrier concentrations.
Journal ArticleDOI
A study of the properties of hydrogenated amorphous germanium produced by r.f. glow discharge as the electrode gap is varied the link between microstructure and optoelectronic properties
Paul Wickboldt,S. J. Jones,Francisco C. Marques,D. Pang,W. A. Turner,A. E. Wetsel,William Paul,J. H. Chen +7 more
TL;DR: In this article, a diode-type deposition system for hydrogenated amorphous germanium films with glow discharge on the powered electrode was used to obtain a continuous monotonic change in both the optoelectronc and the structural properties of the films.
Journal ArticleDOI
A review of amorphous silicon alloys. Fabrication, properties and applications
TL;DR: A review of amorphous silicon alloys (other than a-Si: H) is presented in this article, where the main focus is on experimental results and their basic operational principles.
Journal ArticleDOI
Gap state distribution of hydrogenated amorphous silicon-germanium alloys
TL;DR: In this paper, the gap state distribution (GSD) of a Si1−xGex:H alloys in the upper half of the mobility gap has been studied as a function of Ge content by using transient photoconductivity, steady state photoconductivities, and space charge limited conduction in n+in+ structures.
Journal ArticleDOI
Comparison of the structural properties of a-Si:H prepared from SiH4 and SiH4 + H2 plasmas, and correlation of the structure with the photoelectronic properties
TL;DR: In this article, a-Si: H(: D) in an r.f. glow-discharge reactor from SiH4, siH4 + H2, and SiH 4 + D2 was investigated and no significant differences between optical and electronic properties of the as-deposited materials were found.
References
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Journal ArticleDOI
Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
D.L. Staebler,C. R. Wronski +1 more
TL;DR: In this article, the authors show that long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a•Si':'H). Annealing above ∼150°C reverses the process.
Journal ArticleDOI
Staebler-Wronski effects in hydrogenated amorphous Si1−xGex
TL;DR: In this article, photo-induced defects in hydrogenated amorphous silicon (a-Si:H) and a-Si 1−xGex:H were studied and their effect on opto-electronic properties were analyzed.
Journal ArticleDOI
Amorphous Solar Cells Using a-Si: H and a-SiGe: H Films
TL;DR: The electric properties of optimized a-SiGe: H films deposited by an R.F. glow discharge in (SiH4+GeH4) and application of these films to the tandem type solar cells were investigated in this article.