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Journal ArticleDOI

The crystallographic connection of MOCVD-grown monolithic cascade subcells via transparent graded layers

TLDR
In this article, a double mismatch technique was used to grow a monolithic cascade solar cell, where changes of lattice constant occur not only between the substrate and lower cell, but also between the lower and upper cells.
About
This article is published in Journal of Crystal Growth.The article was published on 1984-11-02. It has received 31 citations till now.

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Citations
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Journal ArticleDOI

Metalorganic chemical vapor deposition of III‐V semiconductors

TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Patent

Heterojunction subcells in inverted metamorphic multijunction solar cells

TL;DR: An inverted metamorphic multifunction solar cell, and its method of fabrication, including an upper subcell, a middle subcell and a lower subcell including providing a first substrate for the epitaxial growth of semiconductor material, was presented in this paper.
Patent

Metamorphic layers in multijunction solar cells

TL;DR: In this paper, a multijunction solar cell consisting of an upper subcell, a middle subcell and a lower subcell was constructed, where the first substrate was provided by the epitaxial growth of semiconductor material, and the second substrate was a lattice mis-matching with respect to the second subcell.
Patent

Four junction inverted metamorphic multijunction solar cell with a single metamorphic layer

TL;DR: In this paper, a multijunction solar cell including an upper first solar subcell having a first band gap, a second subcell adjacent to the first subcell and a graded interlayer having a third band gap greater than the second band gap; and a third subcell with a fourth band gap smaller than the 2nd band gap such that the 3rd subcell is lattice mismatched with respect to the 2D subcell.
Patent

Ohmic N-contact formed at low temperature in inverted metamorphic multijunction solar cells

TL;DR: In this article, a multijunction solar cell including an upper subcell, a middle subcell and a lower subcell was constructed by providing a substrate for the epitaxial growth of semiconductor material.
References
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Journal ArticleDOI

High‐efficiency (21.4%) Ga0.75In0.25As/GaAs (Eg=1.15 eV) concentrator solar cells and the influence of lattice mismatch on performance

TL;DR: In this paper, the spectral response and currentvoltage characteristics under concentration, of cells grown by organometallic vapor phase epitaxy on graded and ungraded lattice-constant buffer layers are compared.
Journal ArticleDOI

Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1-ηPη and GaAs1-nPη

TL;DR: In this article, a break was found in the dependence of the diffusion coefficient of zinc on the composition of GaAs1−ηPη at a phosphorus content in the solid solution η ≈ 0.4.
Journal ArticleDOI

Ga0.80In0.20As 1.20‐eV high quantum efficiency junction for multijunction solar cells

TL;DR: In this paper, a Ga0.80In0.20As junction for solar cell applications grown on GaAs by organometallic vapor phase epitaxy (OMVPE) with a peak collection quantum efficiency of 92% is reported.
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