Journal ArticleDOI
The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
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In this paper, a study of room-temperature implantations of group III and group V ions into amorphous Si layers prepared by the previous implantation of Si ions into crystalline Si substrates was made.Abstract:
A study has been made of room‐temperature implantations of group III and group V ions into amorphous Si layers prepared by the previous implantation of Si ions into crystalline Si substrates. Neutron activation combined with anodic oxidation and HF stripping techniques was used to determine the proflies of the implanted ions for Ga71 and Sb121. Electrical evaluation of the implanted layers by Hall effect and sheet resistivity measurements in conjunction with layer removal techniques yielded profiles of the net electrically active species and the depth variation of mobility after annealing for 30 min in the temperature range 600°–900°C. The ion species studied were B11 (60–200 keV), Al27 (200 keV), Ga69&71 (140 and 280 keV), P31 (100–280 keV), As75 (280 keV), Sb121&123 (120 and 260 keV), and Bi209 (240 keV). The epitaxial regrowth of the amorphous phase at 600°C causes most of the implanted ions within this region to become electrically active and uncompensated for the ion species B, P, As, Sb, and Bi even for peak ion concentrations in excess of 1020 cm−3. For Al and Ga implants, the number of carriers was less than the number of implanted ions. The profiles obtained for these implantations into amorphous Si were compared with predictions based on the theory of Lindhard, Scharff, and Schiott.read more
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Journal ArticleDOI
Ion implantation in semiconductors—Part II: Damage production and annealing
TL;DR: In this article, a qualitative description of the damage produced by an implanted ion is presented, followed by a partial inventory of the basic defects that are found in ion-implanted silicon, where theoretical predictions are compared to a variety of experimental data.
Journal ArticleDOI
Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions
TL;DR: In this article, the effect of impurities on the epitaxial regrowth of Si from amorphous layers created by ion implantation into 〈100〉 and 》111〉 Si wafers was studied by channeling effect measurements with 2.MeV 4He ions.
Journal ArticleDOI
Depth distribution of energy deposition by ion bombardment
Irwin Manning,G.P. Mueller +1 more
Journal ArticleDOI
Regrowth behavior of ion-implanted amorphous layers on silicon
TL;DR: In this paper, the regrowth of Si crystal from amorphous layers created by Si implantation into 〈111〉, ¼ 100 ¼ and ¼ 110 ¼ Si was studied.
Journal ArticleDOI
Estimation of impurity profiles in ion‐implanted amorphous targets using joined half‐Gaussian distributions
J.F. Gibbons,S. Mylroie +1 more
TL;DR: In this article, a probability distribution for nonsymmetrical impurity distributions in ion-implanted targets is defined to consist of two half-Gaussian distributions that join at a modal projected range RM.