Journal ArticleDOI
The Reduction of Silica with Carbon and Silicon Carbide
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TLDR
In the presence of carbon or silicon carbide, silica can be reacted to form a vapor of silicon monoxide and the rates of these reactions were explored at 1300° to 1550°C as mentioned in this paper.Abstract:
In the presence of carbon or silicon carbide, silica can be reacted to form a vapor of silicon monoxide. The rates of these reactions were explored at 1300° to 1550°C. For mixtures of carbon and silica, evidence supported a two-step reaction: silicon carbide formed prior to reaction between silicon carbide and silica.read more
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Relationships between processing, microstructure and properties of dense and reaction-bonded silicon nitride
TL;DR: In this paper, the relationship between powder properties, process conditions, densification and microstructure, as well as the interdependence between microstructures and properties is discussed.
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Click Synthesis of Monolithic Silicon Carbide Aerogels from Polyacrylonitrile-Coated 3D Silica Networks
TL;DR: In this article, the synthesis of monolithic highly porous (70% v/v) SiC by carbothermal reduction (1200−1600 °C) of 3D sol−gel silica nanostructures (aerogels) conformally coated and cross-linked with polyacrylonitrile (PAN) is described.
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Sintering of silicon carbideI. Effect of carbon
TL;DR: In this article, the role of carbon in activating the process of SiC sintering is not fully understood, and the authors examined the weight and microstructure changes of samples sintered with different additions of carbon (up to 16 wt.%).
Journal ArticleDOI
Reactions of Silicon Carbide and Silicon(IV) Oxide at Elevated Temperatures
TL;DR: In this article, the reaction between SiC and SiO2 has been studied in the temperature range 1400-1600 K. A Knudsen cell in conjunction with a vacuum microbalance and a high-temperature mass spectrometer was used for this study.
Journal ArticleDOI
Role of Carbon in the Sintering of Boron‐Doped Silicon Carbide
TL;DR: The effect of carbon on the sintering of boron-doped SiC was studied in this article, where the free carbon present in the green compact was found to react with the SiO2 covering the surfaces of the SiC particles.