Theoretical Model For The Optical Properties Of In 2 O 3 : Sn Films In The 0.3-50-µm range

TLDR: In this paper, a detailed theoretical model for the optical properties of heavily dopQd oxide semiconductors was formulated and applied to calculate their integrated luminous, solar and thermal properties.

Abstract: We formulate a detailed theoretical model for the optical properties of heavily dopQd oxide semiconductors. The complex dielectric function is expressed as e = 1+χVE+χFC+χPH, where the χs are susceptibilities due to valence electrons (VE), free carriers (FC), and polar optical phonons (PH). We obtained χVE by including a wavelength-shifted Urbach tail of the direct semiconductor transition. χFC was calculated from the Gerlach-Grosse theory and accounting for screening of point-like ions within the Random Phase Approximation. Pseudo-potential scattering as well as exchange and correlation effects in the electron gas were considered. χPH was specified through emipirically determined damped Lorentz oscillators. The model was applied to In203:Sn coatings and used to compute their integrated luminous, solar and thermal properties. Optimization of thickness and electron density yielded single coatings on glass with 78% normal solar transmittance and 20% hemispherical thermal emittance.