Journal ArticleDOI
Transport of nitrogen atoms during liquid phase epitaxial growth of InAsN and GaAsN
TLDR
In this article, the authors used a one-dimensional diffusion model to investigate the transport of nitrogen during a liquid phase epitaxial growth of InAsN layers from Bi and In solvents and GaAsN from Ga solvent.Abstract:
We have used a one-dimensional diffusion model to investigate the transport of nitrogen during a liquid phase epitaxial growth of InAsN layers from Bi and In solvents and GaAsN layers from Ga solvent. The concentration profile of nitrogen near the growing interface has been obtained for the materials for different melt supercooling and cooling rates. Experimental results on the growth of InAsN layers from Bi solutions using the optimum growth parameters suggested by the study are shown.read more
Citations
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Journal ArticleDOI
Study of the liquid phase epitaxy growth kinetics of AlSbBi and AlGaSbBi
M.K. Bhowal,S. Dhar +1 more
TL;DR: In this paper, an one-dimensional diffusion model is used to investigate the concentration profiles of Bi near the growing interface during LPE growth of AlSbBi and AlGaSbbi.
Book ChapterDOI
Group III-V Bismide Materials Grown by Liquid Phase Epitaxy
TL;DR: In this paper, the authors review the application of the simple liquid phase epitaxy (LPE) technique for the growth of some members of the III-V-Bi series and describe the growth procedure and characterization of these two ternaries by different groups with special emphasis on the structural, luminescence, and band gap reduction properties.
References
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Book
Conduction of Heat in Solids
H. S. Carslaw,John Conrad Jaeger +1 more
TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Journal ArticleDOI
Correlation of diffusion coefficients in dilute solutions
Charles R. Wilke,Pin Chang +1 more
TL;DR: In this paper, the relation of P to conveniently available properties of dilute solutions is generalized to permit estimation of diffusion coefficients for engineering purposes for convective transport due to volume changes on mixing is negligible and other possible modes of mass transfer are not operative.
Journal ArticleDOI
Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
TL;DR: In this article, a detailed study on the optical quality of atmospheric pressure metalorganic vapor phase epitaxy grown GaAs(1−x)Nx epilayers (on GaAs substrates) in which the incorporation is accomplished using dimethylhydrazine precursor is reported.
Journal ArticleDOI
Computer simulations of liquid phase epitaxy of GaAs in Ga solution
I. Crossley,M.B. Small +1 more
TL;DR: In this article, the concentration profiles of solute at successive intervals of time in front of a crystal interface growing under the normal conditions of liquid phase epitaxy were used to calculate the growth rate, and hence the amount etched or grown as a function of time.
Journal ArticleDOI
The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growth
M.B. Small,J.F. Barnes +1 more
TL;DR: In this article, an approximate solution has been obtained for the distribution of solvent in an unstirred melt under the growth conditions typical of liquid epitaxy, where the growth rate will be limited by the rate at which solvent can be removed from the growing interface.