Proceedings ArticleDOI
Ultrashort pulsed laser tools for testing of semiconductor elements hardness to single event effects, caused by cosmic heavy charged particles
Alexandra V. Gordienko,O. B. Mavritskii,A. N. Egorov,Alexander A. Pechenkin,Dmitriy V. Savchenkov +4 more
Reads0
Chats0
TLDR
In this paper, the main technical requirements for the basic modules of sets for laser testing (laser wavelength and pulse duration and repetition rate, spatial beam parameters and minimal spot size, speed of object movement and so on) are substantiated.Abstract:
The installations for laser testing of microelectronic elements (first of all - integrated circuits) of devices for space applications for hardness to local radiation effects from heavy charged particles are presented. The possibility of a focused pulsed laser radiation application to the study of local radiation effects, caused by single heavy charged particles, is explained. The fundamentals of an approach to the construction of test sets, based on the picosecond and femtosecond lasers and systems for focusing their radiation, are considered. The main technical requirements for the basic modules of sets for laser testing (laser wavelength and pulse duration and repetition rate, spatial beam parameters and minimal spot size, speed of object movement and so on) are substantiated. All worked out sets have a full-featured software for the operational management of all modules of the laser test facility, including the positioning of the object, to provide feedback from the measurement results of the reaction of the object on the laser excitation. The parameters of developed laser hardware and software systems and their foreign counterparts are compared. Further improvement directions for laser testing tools are briefly outlined. The discussion is also presented of described hardware technical and operational characteristics, allowing to use it for a variety of scientific research studies, requiring selective (with submicron spatial resolution) object excitation by ultrashort laser pulses and recording responses to this effect with the exact timing of the moment of excitation, as well as to perform a variety of high precision technological operations.read more
Citations
More filters
Journal ArticleDOI
Influence of ultra-short laser drilling on magnetic and transport characteristics of HTS tapes
Proceedings ArticleDOI
Single event latchup in ICs with integrated latchup protection technology
D.S. Kostyuchenko,A. B. Karakozov,P. V. Nekrasov,A.A. Pechenkin D.V.Savchenkov,A. Yu. Nikiforov +4 more
TL;DR: Test method is described and obtained results presented for ADC 7809ALP with internal latchup protection system are presented, and the results are compared with previous results presented.
Proceedings ArticleDOI
Advances in optical sensing techniques application for simulation of space radiation effects in microelectronic devices using wavelength-tunable femtosecond laser
O. B. Mavritskii,A. N. Egorov,Alexander A. Pechenkin,Dmitriy V. Savchenkov,Dmitry V. Boychenko +4 more
TL;DR: In this paper, the authors investigated the dependence of SEE generation effectiveness on the laser wavelength when irradiating through the substrate of various thickness and found that the most appropriate laser wavelength for the silicon substrate thicknesses of 300 to 800 μm lies in the 1030 to 1070 nm range.
Proceedings ArticleDOI
The laser-only single-event effects test method for space electronics based on ultrashort-pulsed-laser 'local irradiation'
O. B. Mavritskii,A. N. Egorov,Alexander A. Pechenkin,Alexander I. Chumakov,Dmitriy V. Savchenkov +4 more
TL;DR: In this paper, the authors presented the advances of the picosecond and femtosecond laser installations utilization for radiation hardness evaluation of semiconductor electronics for space applications, and showed that the use of backside local irradiation method is the most suitable for laser single event effects tests.
Proceedings ArticleDOI
The Optimal Estimation of Single Event Effects Sensitivity Parameters Using a Focused Laser Source and Heavy Ion Cyclotron on Example of a Library of Analog IP Units
TL;DR: In this article, the sensitivity parameters based on the single event effects (SEE) for a library consisting of 51 analog and analog-to-digital IP units manufactured using CMOS/SOI technology with design standards of 180 nm were evaluated.
References
More filters
Journal ArticleDOI
Short-pulse laser damage in transparent materials as a function of pulse duration
TL;DR: In this article, a single-shot damage threshold measurement and modeling for fused silica at 800 nm as a function of pulse duration down to 20 fs was presented, and the respective roles of multiphoton ionization, tunnel ionization and impact ionization in laser damage were examined.
Journal ArticleDOI
Subbandgap laser-induced single event effects: carrier generation via two-photon absorption
TL;DR: In this article, a subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single photon excitation approach in laser-induced single event effects.
Journal ArticleDOI
Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies
Joseph S. Melinger,S. P. Buchner,Dale McMorrow,W.J. Stapor,Todd R. Weatherford,A.B. Campbell,H. Eisen +6 more
TL;DR: In this article, an evaluation of the pulsed laser as a technique for single events effects (SEE) testing is presented, where the important optical effects, such as laser beam propagation, surface reflection, and linear and nonlinear absorption, determine the nature of laser-generated charge tracks in semiconductor materials.
Proceedings ArticleDOI
Micromachining with ultrashort laser pulses: from basic understanding to technical applications
TL;DR: In this article, a comparison between pico-and femto-second regime is presented, the latter being strongly influenced by the shortness of the laser pulse, a comparison is presented.
Journal ArticleDOI
Backside laser testing of ICs for SET sensitivity evaluation
D. Lewis,Vincent Pouget,Felix Beaudoin,Philippe Perdu,Hervé Lapuyade,Pascal Fouillat,Andre Touboul +6 more
TL;DR: In this paper, a new experimental approach combining backside laser testing and analog mapping is presented, which is applied to the study of single-event transient (SET) sensitivity on a linear IC.