Philippe Perdu

TL;DR: In this paper, a new experimental approach combining backside laser testing and analog mapping is presented, which is applied to the study of single-event transient (SET) sensitivity on a linear IC.

TL;DR: In this paper, the authors performed device simulations of laser induced SEU in an SRAM cell with pulse durations from 100 fs to 100 mus, and two regimes were identified and modeled analytically and electrically.

TL;DR: In this paper, a detailed analysis of the physical mechanisms involved in a vertical grounded-base n-p-n bipolar transistor (VGBNPN) under electrostatic discharge (ESD) stress is carried out by using two-dimensional (2D) device simulation, transmission line pulse measurement (TLP) and photoemission experiments.

TL;DR: The spectral analysis of the light emission in the visible near infrared spectrum shows a bell-shape with superimposed distinct emission peaks that suggest that the electroluminescence (EL) signal is due to the direct intraband of electrons and inelastic intraband transition of electrons due to scattering by charged centres.

TL;DR: It is shown that the leakage due to the light emitted during normal operation of a CMOS circuit can be used to set up an attack based on the DPA/DEMA technique, and a second method based on laser stimulation is presented, improving the "traditional" attacks by injecting a photocurrent, which results in a punctual increase of the power consumption of a circuit.