Journal ArticleDOI
Subbandgap laser-induced single event effects: carrier generation via two-photon absorption
TLDR
In this article, a subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single photon excitation approach in laser-induced single event effects.Abstract:
Carrier generation based on subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single-photon excitation approach in laser-induced single event effects. The two-photon approach exhibits characteristics distinct from those of single-photon excitation, and may be advantageous for a range of single-event effect investigations. The charge track produced by two-photon absorption more closely resembles that of heavy-ion irradiation and, because the photon energy is subbandgap, backside injection through bulk silicon wafers is straightforward and three-dimensional mapping is possible.read more
Citations
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Journal ArticleDOI
Enhanced Third-Harmonic Generation in Silicon Nanoparticles Driven by Magnetic Response
Maxim R. Shcherbakov,Dragomir N. Neshev,Ben Hopkins,Alexander S. Shorokhov,Isabelle Staude,Elizaveta V. Melik-Gaykazyan,Manuel Decker,Alexander A. Ezhov,Andrey E. Miroshnichenko,Igal Brener,Andrey A. Fedyanin,Yuri S. Kivshar +11 more
TL;DR: Enhanced third-harmonic generation from silicon nanodisks exhibiting both electric and magnetic dipolar resonances is observed and the field localization at the magnetic resonance results in two orders of magnitude enhancement of the harmonic intensity with respect to unstructured bulk silicon.
Journal ArticleDOI
Nonlinear Fano-Resonant Dielectric Metasurfaces.
Yuanmu Yang,Wenyi Wang,Abdelaziz Boulesbaa,Ivan I. Kravchenko,Dayrl P. Briggs,Alexander A. Puretzky,David B. Geohegan,Jason Valentine +7 more
TL;DR: The Fano-resonant silicon metasurface results in strong near-field enhancement within the volume of the silicon resonator while minimizing two photon absorption and results in transmission modulation with a modulation depth of 36%.
Journal ArticleDOI
Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design
B.D. Olson,Dennis R. Ball,Kevin M. Warren,Lloyd W. Massengill,Nadim F. Haddad,S.E. Doyle,Dale McMorrow +6 more
TL;DR: In this article, a drift-diffusion collection at an NFET transistor in conjunction with parasitic bipolar conduction in nearby PFET transistors is shown to cause upsets in a commercial 0.25 /spl mu/m 10-T SEE hardened SRAM cell.
Journal ArticleDOI
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
Kevin M. Warren,Robert A. Weller,Marcus H. Mendenhall,Robert A. Reed,Dennis R. Ball,C.L. Howe,B.D. Olson,Michael L. Alles,Lloyd W. Massengill,Ronald D. Schrimpf,Nadim F. Haddad,S.E. Doyle,Dale McMorrow,Joseph S. Melinger,W.T. Lotshaw +14 more
TL;DR: In this article, a Geant4-based Monte-Carlo transport code was used to simulate heavy ion irradiation using a SEU hardened SRAM and the results showed that materials external to the sensitive volume can affect the experimentally measured cross-section curve.
Journal ArticleDOI
Three-dimensional mapping of single-event effects using two photon absorption
Dale McMorrow,W.T. Lotshaw,Joseph S. Melinger,S. P. Buchner,Y. Boulghassoul,Lloyd W. Massengill,R.L. Pease +6 more
TL;DR: In this paper, carrier generation based on subbandgap two-photon absorption is used to perform three-dimensional mapping of the single-event transient response of the LM124 operational amplifier.
References
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Journal ArticleDOI
Two-Photon Laser Scanning Fluorescence Microscopy
TL;DR: The fluorescence emission increased quadratically with the excitation intensity so that fluorescence and photo-bleaching were confined to the vicinity of the focal plane as expected for cooperative two-photon excitation.
Journal ArticleDOI
Optical absorption in heavily doped silicon
TL;DR: In this paper, optical absorption measurements at 300 and 4 K on a series of heavily doped Si:As and Si:B samples are reported and the interband contribution is isolated and confronted with the predictions of an electron-gas calculation.
Journal ArticleDOI
Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies
Joseph S. Melinger,S. P. Buchner,Dale McMorrow,W.J. Stapor,Todd R. Weatherford,A.B. Campbell,H. Eisen +6 more
TL;DR: In this article, an evaluation of the pulsed laser as a technique for single events effects (SEE) testing is presented, where the important optical effects, such as laser beam propagation, surface reflection, and linear and nonlinear absorption, determine the nature of laser-generated charge tracks in semiconductor materials.