Proceedings ArticleDOI
Wide bandwidth GSM/WCDMA/LTE base station LNA with ultra-low sub 0.5 dB noise figure
Joseph Staudinger,Rick Hooper,M. Miller,Yun Wei +3 more
- pp 223-226
TLDR
This work represents one of the best matched LNA noise figures reported to-date in this frequency band, and simultaneously exhibits gain greater than 21 dB, excellent linearity, and is closely matched to 50 Ω at the input and output ports.Abstract:
This paper presents a highly integrated, sub 0.5 dB noise figure (NF) low noise amplifier (LNA) targeting 700/900 MHz GSM/CDMA/LTE base station receiver and tower mount antenna (TMA) applications. The amplifier is realized using a GaAs pHEMT process, and is housed in a very small 2 × 2 mm2 low cost plastic surface mount DFN style package. State-of-the art noise performance of less than 0.5 dB NF is achieved through an innovative design methodology and circuit architecture which takes full advantage of the selected GaAs device technology. This work represents one of the best matched LNA noise figures reported to-date in this frequency band. In addition to very low noise performance, the amplifier simultaneously exhibits gain greater than 21 dB, excellent linearity, and is closely matched to 50 Ω at the input and output ports. Very wide bandwidth performance from 300 MHz to beyond 1400 MHz is demonstrated, and performance within this frequency range can be further enhanced through selection of specific off-chip components.read more
Citations
More filters
Proceedings ArticleDOI
1.5–2.7 GHz ultra low noise bypass LNA
TL;DR: This work presents the best performance bypass LNA with 0.5 dB of noise figure, 20 dB of gain at 1.95 GHz and high OIP3 of 35 dBm for both LNA and bypass mode.
Proceedings ArticleDOI
Ultra low-noise highly linear integrated 1.5 to 2.7 GHz LNA
TL;DR: In this paper, a wideband, fully integrated, low-noise amplifier with a noise figure of less than 0.5 dB was presented, which achieved the best result of reported combination of low noise figure, OIP3 (40 dBm), and Linearity Figure of Merit (LFOM) at a frequency range of 1.5-2.7GHz for sub-0.5dB NF LNA, and integrated power-down function for system control.
Proceedings ArticleDOI
Impact of LNA Performances on Mobile Base Station Receiver
Kenjiro Nishikawa,Masanobu Tsujii,Koshi Hamano,Kunihiro Kawai,Hiroshi Okazaki,Shoichi Narahashi +5 more
TL;DR: The investigation indicated the high linearity LNA enables to decrease the required filter performances on the receiver, resulting in low cost and compact base station.
Proceedings ArticleDOI
Design and implementation of low noise amplifier for MRI scanner
TL;DR: Low noise amplifier is designed for 1.5T MRI Scanner, having noise figure 0.5-0.6 dB with gain greater than 20 dB at frequency of 63.87 MHz, Bandwidth is 5 MHz.
Proceedings ArticleDOI
A High Linearity Wide Bandwidth GSM/WCDMA/LTE Base Station LNA MMIC with Ultra Low Noise Figure
Onur Memioglu,Adnan Gundel +1 more
TL;DR: In this article, a high linearity wide bandwidth low noise amplifier (LNA) MMIC with excellent noise figure is presented for GSM/WCDMA/LTE base station receiver applications.
References
More filters
Proceedings ArticleDOI
Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications
TL;DR: In this paper, a BiCMOS LNA and mixer designed for cellular CDMA/AMPS applications are described, which exhibit very high linearity thanks to low-impedance low-frequency input terminations.
Proceedings ArticleDOI
Si-MMIC BiCMOS low-noise high-linearity amplifiers for base station applications
TL;DR: In this article, a low-noise, high-linearity amplifier chip set for GSM 900 and DCS 1800 base station receivers is reported, consisting of LNA and driver amplifier pairs, using a 0.25 /spl mu/m silicon BiCMOS process.
Proceedings ArticleDOI
900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3
TL;DR: In this paper, a sub-1dB NF fully integrated low noise amplifier in a 0.25µm SiGe∶C BiCMOS technology targeting GSM base-station applications is discussed.