Patent
ZnSe green light emitting diode
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TLDR
In this paper, a green color light emitting ZnSe diode having a pn junction is fabricated by the use of a Zn Se crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent containing at least Te and Se and using atoms of at least one kind of impurity selected from Group Ib elements of the Periodic Table as a principal impurity for producing a p type region in the crystal.Abstract:
A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent containing at least Te and Se and using atoms of at least one kind of impurity selected from Group Ib elements of the Periodic Table as a principal impurity for producing a p type region in the crystal.read more
Citations
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Process for doping crystals of wide band gap semiconductors
TL;DR: In this article, non-equilibrium impurity incorporation is used to dope hard-to-dope crystals of wide band gap semiconductors, such as zinc selenide and zinc telluride.
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Wide band-gap semiconductors having low bipolar resistivity and method of formation
TL;DR: In this article, a wide band-gap semiconductor, such as a II-VI semiconductor having low bipolar resistivity and a method for producing such a semiconductor was presented. But the method was not suitable for the case of high power semiconductors.
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Zinc sulfide or selenosulfide material
TL;DR: A pigment is a material comprising crystalline zinc selenide or selenosulphide below 40% of whose zinc atoms and optionally some of whose selenium and sulphur atoms are substituted to lower the band gap energy but retain the essential crystal lattice.
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Method of making a Group II-VI compound semiconductor device by solution growth
TL;DR: In this paper, the p type semiconductor crystal is obtained by growing the II-VI compound semiconductor by relying on a liquid phase crystal growth process using a solvent comprised of one of Group II and Group VI elements constituting the Group II-, Group VI, and having a higher vapor pressure over the other of these elements in an atmosphere comprised of the other elements having a lower vapor pressure under controlled vapor pressure of the atmosphere, and by doping into the solvent a p type impurity element selected from Group Ia and Ib elements.
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Ampoule for growth of zinc selenide single crystals
Huanyong Li,Wanqi Jie +1 more
TL;DR: In this article, an ampoule for the growth of zinc selenide single crystals is described, which can also be used for preparing other II-VI group compound semiconductor single crystals.
References
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Patent
Method of fabricating a semiconductor pn junction
TL;DR: In this article, a method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is described, the method including preparing an n type semiconductor region either locally or entirely in a group IIB VIB crystal obtained by relying on a crystal growth method in liquid phase using a temperature difference technique, and subjecting this crystal to a thermal annealing in a Zn solution or in the Zn atmosphere.
Patent
Method for producing a group IIB-VIB compound semiconductor crystal
TL;DR: In this paper, a temperature-difference method for growing a Group II-VI compound semiconductor crystal containing a Group VI element other than Te was proposed. But this method requires the crystal to be grown at a relatively low temperature by maintaining the vapor pressure of the VI group element at a predetermined value.
Patent
Method of manufacturing pn junction in group II-VI compound semiconductor
Jun-ichi Nishizawa,Ito Kazuomi +1 more
TL;DR: In this paper, a method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming therein a gold alloy in an inert gas atmosphere.
Patent
Semicondoctor p-n junction device and manufacture thereof
TL;DR: In this article, the vapor pressure is controlled by the ratio of Te to Se, impurity is thus contained in the mixture solution, Au, Ag or P is then doped, crystals are grown at 800-400 degC, and a p-n junction is thus formed In this manner, the junction can be formed at low temperature, and the range of the displacement from stoichiometric composition is reduced Accordingly, the Se vacant lattice point and its complex density can be further decreased.