What is the potential range related to CO adsorption on Cu2O catalysts?5 answersThe potential range related to CO adsorption on Cu2O catalysts is crucial for understanding their catalytic activity. Studies have shown that Cu2O surfaces can oxidize to Cu2O and CuO in the presence of CO2, with a high kinetic barrier to H2 dissociation on Cu2O. Additionally, the interaction between CuO species and nanosized ceria (n-CeO2) plays a decisive role in the catalytic activity of CuCeOX catalysts, with CuCeO9 showing the highest activity due to a stronger interaction and the formation of more readily reducible copper species. Furthermore, CuO-In2O3/HNT catalysts have demonstrated higher CO2 conversion and DME selectivity compared to non-indium CuO/HNT catalysts, with the best catalyst achieving a CO2 conversion of 7.6% and 65% DME selectivity under specific reaction conditions.
Why the bandgap energy decreases with increase in substrate temperature in spinel oxide thin films?4 answersThe decrease in bandgap energy with an increase in substrate temperature in spinel oxide thin films can be attributed to the impact of temperature on the structural and optical properties. As observed in various studies, such as those on ZnO thin filmsand LiMn2O4 thin films, an increase in substrate temperature leads to changes in grain size, crystallite orientation, and defect concentration. These alterations influence the bandgap energy, causing it to decrease. Additionally, the decrease in Urbach energy with increasing temperatureindicates a reduction in defects, contributing to the bandgap narrowing. Therefore, the interplay of structural modifications and defect concentrations induced by temperature variations results in the observed decrease in bandgap energy in spinel oxide thin films.
Does the energy band gap decrease as the particle size increases?5 answersThe energy band gap of semiconductor materials tends to decrease as the particle size increases. However, there are cases where the energy band gap can increase with increasing particle size. For example, in the synthesis of CexSn1−xO2 nanoparticles, higher values of x result in larger particle sizes and a smaller energy band gap. Similarly, Fe-doped CeO2 nanoparticles show a slight increase in the energy band gap with increasing Fe concentration, which is attributed to the decrease in particle size. On the other hand, in the case of orthorhombic β- and hexagonal α-NaFeO2 nanoparticles, the band gap energy increases with decreasing particle size. Therefore, the relationship between energy band gap and particle size can vary depending on the specific material and synthesis method.
How does the surface lattice parameter of Cu(111) compare to that of the bulk?5 answersThe surface lattice parameter of Cu(111) is larger than that of the bulk.The lattice constant of the PtSn surface, which forms a stable water layer, is about 7% greater than that of a bulk ice layer.The lattice dynamics of the Cu(111)-Au 3 × 3 R30° surface alloy structure reveal novel surface phonon and resonance dispersion branches.The adsorption and interfacial energetics of vapor deposited Cu onto Pt(111) show that the Cu grows as 2D pseudomorphic islands in the first layer, with increasing lattice strain associated with island size.The adhesion energy of multilayer Cu onto Pt(111) is 3.76 J/m2.
What us properties of cuprous oxide crystal in solar?5 answersCuprous oxide (Cu2O) is a semiconductor material with a direct band gap of about 2 eV, making it suitable for solar applications such as light emitting diodes (LEDs) and solar cells. It has been found that the properties of Cu2O films can be influenced by the deposition conditions and annealing processes. Films deposited at low substrate temperatures were found to be less crystalline compared to those deposited at high substrate temperatures, resulting in lower sheet resistivity and band gap values. Cu2O can be used as a p-type semiconductor in heterojunction solar cells, and the efficiency of these cells can be adjusted by varying the thickness of the Cu2O layer. Electrodeposition methods have been used to fabricate Cu2O films, and these films have shown photovoltaic properties after heat treatment. Overall, Cu2O exhibits promising properties for solar applications and offers possibilities for low-cost cell production.
What is the band gap energy of metals?5 answersThe band gap energy of metals refers to the energy difference between the valence band and the conduction band in the electronic band structure. It is a measure of the energy required to promote an electron from the valence band to the conduction band, and it determines the electrical and optical properties of the material. The band gap energy can vary depending on the composition and structure of the metal. For example, in the case of Zn3N2, the band gap energy was found to be 1.06 eV. In the study of metal iodates, the band gap energy of a hydrated metal iodate was successfully increased from 4.52 to 4.92 eV by applying external pressure. The band gap energy of noble metals like copper and gold has also been calculated and compared with estimations, showing that the energy gaps are not sufficient to show any contact between the Fermi surface and the zone face L.