How does the choice of area contacts affect the reverse I-V-T measurements of Ti/6H-SiC(n) Schottky diodes?
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The choice of area contacts significantly impacts the reverse I-V-T measurements of Ti/6H-SiC(n) Schottky diodes. Different contact sizes (1.6 × 1.6, 1.6 × 0.4, and 0.4 × 0.4 mm^2) exhibit varying behaviors. Larger and medium-sized diodes show near-ideal characteristics following thermionic emission theory, while smaller diodes display abnormal interface inhomogeneities affecting their characteristics . Additionally, the integration of Schottky barrier diodes into SiC MOSFETs can prevent bipolar degradation issues, with the reverse conduction achieved through unipolar current, enhancing long-term reliability . Moreover, the thermal sensitivity of Ni/n-6H-SiC Schottky diodes changes after thermal annealing, affecting the linearity of the V-T and α-I graphs due to the formation of a resistive inhomogeneous layer at the interface .
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5 Citations | The choice of area contacts affects the reverse I-V-T measurements of Ti/6H-SiC(n) Schottky diodes by influencing the barrier height, leakage current, and overall electrical properties. |
01 Feb 2022 6 Citations | Not addressed in the paper. |
2 Citations | The contact area size influences the reverse I-V-T measurements of Ti/6H-SiC(n) Schottky diodes, with larger and medium diodes exhibiting near-ideal behavior, while smaller diodes show abnormal interface inhomogeneities. |
28 Jul 2022 | The choice of area contacts impacts reverse I-V-T measurements of Ti/6H-SiC(n) Schottky diodes by influencing the reverse turn-on voltage, enabling reliable reverse conduction with unipolar current. |
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Step 3:
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