How GaN Field-Plate dielectric affect the TDDB?
Best insight from top research papers
The presence of a field plate in GaN devices significantly impacts Time-Dependent Dielectric Breakdown (TDDB). Field plates enhance breakdown voltage, as evidenced by a GaN HEMT with a field plate exhibiting a breakdown voltage of 292V compared to 98V without a field plate . Additionally, the use of a field plate in GaN MIS-FETs contributes to robust forward gate TDDB stability, allowing for an extrapolated operating gate voltage of 7V or 8.8V after 10 years with 1% failure rate . However, the introduction of a field plate can lead to reduced frequency performance, with field-plated GaN HEMTs showing lower cut-off and maximum frequencies compared to those without field plates . Understanding the impact of field plates on TDDB is crucial for optimizing the reliability and performance of GaN devices.
Answers from top 5 papers
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| Papers (5) | Insight |
|---|---|
01 Mar 2019 5 Citations | The GaN Field-Plate dielectric in GaN MIS-HEMTs affects TDDB by influencing breakdown times under AC stress, showing longer times compared to DC stress due to gate stack dynamics. |
| Gate dielectric in GaN FETs can lead to Time-Dependent Dielectric Breakdown (TDDB) due to defect accumulation under high electric fields, shortening device lifetime. | |
1 Citations | Not addressed in the paper. |
01 Oct 2019 3 Citations | The GaN Field-Plate dielectric influences Time-Dependent Dielectric Breakdown (TDDB) by affecting breakdown mechanisms, Weibull distribution shape, mean time to failure, percolation path establishment, and electron trapping processes. |
20 Jul 2020 2 Citations | Not addressed in the paper. |
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