How is performed oxygen implantation?
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Oxygen implantation is conducted by exposing silicon substrates to oxygen ions at high temperatures to create specific structures. The process involves using heavy metals as ion masks and bottom ion-stopping layers to confine the oxygen ions within desired regions . Additionally, oxygen gettering materials are employed to capture impinging oxygen effectively . High-temperature annealing post-implantation results in the formation of a buried metal oxide layer with sharp oxygen boundaries across the active device region . The implantation process can significantly reduce surface roughness, suppress ion-beam-induced damages, and stabilize the buried oxide and silicon layers, making it suitable for various applications such as forming silicon-on-insulator structures .
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| Oxygen implantation in GaN/Sapphire was conducted at 30 keV, 60 keV, and 100 keV with doses of 3 × 10^14 cm−2, 5 × 10^14 cm−2, and 1.2 × 10^15 cm−2 to achieve a flat impurity doping profile. | |
| Oxygen ion implantation is performed using a chamber with lamp heaters that apply varying heat to wafers, enhancing the process efficiency and control. | |
| Oxygen ion implantation is performed using heavy metals as masks and ion-stopping layers, with gettering materials above and below the active region to capture oxygen, followed by high-temperature annealing. | |
| Oxygen ion implantation is performed in making integrated devices by using heavy metals as ion masks and bottom layers, along with oxygen gettering materials to capture impinging oxygen during high-temperature annealing. | |
| Oxygen ion implantation in silicon is performed at high substrate temperatures up to 1000°C using 180 keV ions, achieving stoichiometric SOI-Si and BOX-SiO2 layers with reduced damages. |
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