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How much is the surface energy of silicon nitride? 


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The surface energy of silicon nitride (Si3N4) has been measured to be 10–7 ± 0–8 J m−2. Dry and wet oxidation of the nitride was found to increase the surface energy from 8 mJ/m2 to more than 50 mJ/m2. The molecular dynamics simulation method was used to investigate the growth of silicon nitride films, and the Si(Nx) (x = 1–4) and N(Siy) (y = 1–3) bond configurations in the grown films were analyzed. The reaction of N2+ ions with the Si(100) surface was studied, and the position, width, and shape of the Si 2p band were explained in terms of different bonding configurations, denoting a Si atom with n nitrogen neighbors. The surface potential of GaN:Si was determined for Si doping, and the surface potential was found to decrease with increasing carrier concentration from about 1.6 eV down to 0.2 eV.

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The provided paper does not mention the surface energy of silicon nitride.
The surface energy of silicon nitride was measured to be 10-7 ± 0-8 J m-2 in both as-sintered and annealed specimens.
The provided paper does not mention the surface energy of silicon nitride.
The provided paper is about the determination of the surface potential of GaN:Si, and it does not provide information about the surface energy of silicon nitride.
The surface energy of silicon nitride is increased from 8 mJ/m2 to more than 50 mJ/m2 after dry and wet oxidation, according to the paper.

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