What are the effect of leakage current on gate oxide integrity?
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Leakage current in gate oxide can have several effects on its integrity. Widening the oxide layer can significantly reduce the source-gate leakage current, but it also reduces the effectiveness of the gate voltage . Gate oxide quality and lifetime can be determined by measuring gate current, which provides accurate oxide thickness calculations and correlates well with time dependent dielectric breakdown (TDDB) . Gate dielectric leakage current becomes a concern when the oxide thickness is less than 3 nm, as it can degrade circuit performance. A mathematical model is presented to predict gate leakage current, taking into account the shallow trench isolation effect and the source-drain extension effect . Plasma nitrided gate oxide can reduce gate leakage current and optimize reliability without sacrificing performance . Gate-leakage currents, particularly direct-tunneling (DT) current, can have a significant impact on the behavior of CMOS circuits, especially for aggressively scaled devices with ultra-thin gate dielectrics .
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| Papers (5) | Insight |
|---|---|
2 Citations | The gate leakage current reduction and reliability optimization with an EOT 15A plasma nitrided gate oxide were explored. |
1 Citations | The gate dielectric leakage current can degrade circuit performance and is a concern for metal-oxide-semiconductor field-effect-transistors with thin gate oxide thickness. |
16 May 2004 1 Citations | The leakage current can increase power dissipation and cause voltage drop, leading to degradation in swing and output voltage in CMOS circuits. |
| The paper suggests that lower gate current results in better gate oxide lifetime, indicating that leakage current can affect gate oxide integrity. | |
6 Citations | The widening of the gate oxide layer reduces the source-gate leakage current but also reduces the effectiveness of the gate voltage. |
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